Dynamically power-controllable CMOS inverters have been successfully demonstrated using separated-gate four-terminal (4T) FinFETs. The threshold voltages of the both pMOS and nMOS FinFETs can be flexibly controlled by applying a bias voltage to the control-gate. We demonstrate for the first time that the power consumption of the CMOS inverter can be dynamically controlled using the variable threshold voltage provided by the 4T-FinFET. These results strongly suggest the advantage of the power-managed CMOS circuits using 4T-FinFETs.
- CMOS inverter
- Four-terminal (4T)
- Power management
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering