A dynamical power-management demonstration using four-terminal separated-ate FinFETs

K. Endo, Y. Ishikawa, Y. X. Liu, T. Matsukawa, S. O'uchi, K. Ishii, M. Masahara, J. Tsukada, H. Yamauchi, T. Sekigawa, H. Koike, E. Suzuki

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Dynamically power-controllable CMOS inverters have been successfully demonstrated using separated-gate four-terminal (4T) FinFETs. The threshold voltages of the both pMOS and nMOS FinFETs can be flexibly controlled by applying a bias voltage to the control-gate. We demonstrate for the first time that the power consumption of the CMOS inverter can be dynamically controlled using the variable threshold voltage provided by the 4T-FinFET. These results strongly suggest the advantage of the power-managed CMOS circuits using 4T-FinFETs.

Original languageEnglish
Pages (from-to)452-454
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number5
DOIs
Publication statusPublished - 2007 May 1
Externally publishedYes

Keywords

  • CMOS inverter
  • Etch-back
  • FinFET
  • Four-terminal (4T)
  • Power management
  • V

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Endo, K., Ishikawa, Y., Liu, Y. X., Matsukawa, T., O'uchi, S., Ishii, K., Masahara, M., Tsukada, J., Yamauchi, H., Sekigawa, T., Koike, H., & Suzuki, E. (2007). A dynamical power-management demonstration using four-terminal separated-ate FinFETs. IEEE Electron Device Letters, 28(5), 452-454. https://doi.org/10.1109/LED.2007.895451