A dynamical power-management demonstration using four-terminal separated-ate FinFETs

K. Endo, Y. Ishikawa, Y. X. Liu, T. Matsukawa, S. O'uchi, K. Ishii, M. Masahara, J. Tsukada, H. Yamauchi, T. Sekigawa, H. Koike, E. Suzuki

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Dynamically power-controllable CMOS inverters have been successfully demonstrated using separated-gate four-terminal (4T) FinFETs. The threshold voltages of the both pMOS and nMOS FinFETs can be flexibly controlled by applying a bias voltage to the control-gate. We demonstrate for the first time that the power consumption of the CMOS inverter can be dynamically controlled using the variable threshold voltage provided by the 4T-FinFET. These results strongly suggest the advantage of the power-managed CMOS circuits using 4T-FinFETs.

Original languageEnglish
Pages (from-to)452-454
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
Publication statusPublished - 2007 May
Externally publishedYes


  • CMOS inverter
  • Etch-back
  • FinFET
  • Four-terminal (4T)
  • Power management
  • V

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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