A dynamical power-management demonstration using four-terminal separated-gate FinFETs

K. Endo, Y. Ishikawa, Y. X. Liu, T. Matsukawa, S. O'uchi, K. Ishii, M. Masahara, J. Tsukada, H. Yamauchi, T. Sekigawa, H. Koike, E. Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinFETs. We demonstrate for the first time that the power consumption of the CMOS inverter can dynamically be controlled using the 4T-FinFET.

Original languageEnglish
Title of host publication2006 IEEE international SOI Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages81-82
Number of pages2
ISBN (Print)1424402905, 9781424402908
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes
Event2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States
Duration: 2006 Oct 22006 Oct 5

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2006 IEEE International Silicon on Insulator Conference, SOI
Country/TerritoryUnited States
CityNiagara Falls, NY
Period06/10/206/10/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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