A diamond-tip probe with silicon-based piezoresistive strain gauge for high-density data storage using scanning nonlinear dielectric microscopy

Hirokazu Takahashi, Takahito Ono, Atsushi Onoe, Yasuo Cho, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

This paper reports on the development of diamond probes integrated with an Si-based piezoresistive strain gauge for ultra-high-density ferroelectric data storage beyond 1 Tbit inch-2 with scanning nonlinear dielectric microscopy (SNDM). Only the tip of the probe was composed of diamond, and a cantilever integrated with the piezoresistive sensor was made of Si. The electrophoretic deposition process for diamond growth improved the production yield for sharp diamond tips. The radius of the tip was approximately 100 nm. Topographic imaging using AFM was demonstrated at a constant force mode to verify the performance of the fabricated probe with the piezoresistive strain gauge as a force sensor. The sensitivity of the piezoresistive strain gauge against displacement (ΔR/R) was about 1 × 10-7 nm -1. SNDM experiments on a LiTaO3 substrate were performed. Clear contrast of SNDM image was obtained using the diamond probe. Ferroelectric recording on the LiTaO3 film using the diamond probe was demonstrated. The obtained size of data bit was approximately 50 nm, which corresponds to the recording density of 250 Gbit inch-2.

Original languageEnglish
Article number025
Pages (from-to)1620-1624
Number of pages5
JournalJournal of Micromechanics and Microengineering
Volume16
Issue number8
DOIs
Publication statusPublished - 2006 Aug 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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