We have investigated mixed-liquid/gas jet cleaning in a single-wafer spin-cleaning system using de-ionized water (DIW), diluted APM, or ultra-diluted HF. The mixed-liquid/gas jet with any of these cleaning solutions can sufficiently remove particles on hydrophilic silicon wafer surfaces without damage to 45nm line structures with an aspect ratio of 3, but neither the mixed-DIW/N2 jet spray or the mixed-diluted APM/N2 jet spray can sufficiently remove particles on hydrophobic surfaces without damage to the structures, while the ultra-diluted HF/N2 jet spray can remove particles in a short period of time without damage and with silicon and oxide loss below 0.003nm and 0.03nm, respectively. The ultra-diluted HF/N2 jet spray cleaning procedure drastically reduces chemical consumption.
|Number of pages||8|
|Publication status||Published - 2005 Dec 1|
|Event||9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States|
Duration: 2005 Oct 16 → 2005 Oct 21
ASJC Scopus subject areas