A damage-free ultra-diluted HF/N2 jet spray for particle removal with minimal silicon and oxide loss

Hideki Hirano, Ko Sato, Tsutomu Osaka, Hitoshi Kuniyasu, Takeshi Hattori

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

We have investigated mixed-liquid/gas jet cleaning in a single-wafer spin-cleaning system using de-ionized water (DIW), diluted APM, or ultra-diluted HF. The mixed-liquid/gas jet with any of these cleaning solutions can sufficiently remove particles on hydrophilic silicon wafer surfaces without damage to 45nm line structures with an aspect ratio of 3, but neither the mixed-DIW/N2 jet spray or the mixed-diluted APM/N2 jet spray can sufficiently remove particles on hydrophobic surfaces without damage to the structures, while the ultra-diluted HF/N2 jet spray can remove particles in a short period of time without damage and with silicon and oxide loss below 0.003nm and 0.03nm, respectively. The ultra-diluted HF/N2 jet spray cleaning procedure drastically reduces chemical consumption.

Original languageEnglish
Pages (from-to)142-149
Number of pages8
JournalECS Transactions
Volume1
Issue number3
Publication statusPublished - 2005 Dec 1
Externally publishedYes
Event9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

ASJC Scopus subject areas

  • Engineering(all)

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