A critical factor to determine the high-temperature creep resistance in cation-doped polycrystalline Al2O3

H. Yoshida, Y. Ikuhara, T. Sakuma

    Research output: Contribution to journalConference articlepeer-review

    5 Citations (Scopus)

    Abstract

    A small dopant effect on the high-temperature creep resistance in high-purity, polycrystalline Al2O3 is examined by uniaxial compression creep testing in air at temperatures between 1150-1350 °C under the applied stress of 10-200 MPa. High-temperature creep resistance in polycrystalline Al2O3 is highly improved by zirconium or lanthanoid ions in the level of about 0.05mol%. High resolution electron microscopy (HREM) and X-ray energy dispersive spectroscopy (EDS) analyse revealed that the dopant cation segregate in grain boundaries, and is likely to influence grain boundary diffusion. This paper aims to show a critical parameter to describe the high-temperature creep rate in cation-doped Al2O3.

    Original languageEnglish
    Pages (from-to)809-816
    Number of pages8
    JournalKey Engineering Materials
    Volume171-174
    Publication statusPublished - 2000
    EventProceedings of the 1999 8th International Conference on Creep and Fracture of Engineering Materials and Structures - Tsukuba, Japan
    Duration: 1999 Nov 11999 Nov 5

    Keywords

    • AlO
    • Creep Resistance
    • Grain Boundary Segregation
    • Molecular Orbital Calculations

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering

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