A correlative analysis between characteristics of FinFETs and SRAM performance

Kazuhiko Endo, Shinichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A correlation between the characteristics of the 30-nm $L G fin-shaped field-effect transistors and the static random-access memory performance is precisely studied. By investigating an effect of the V \rm th variation to the static noise margin (SNM) variation of two different memory states of the storage node, it is revealed that the V \rm th variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM. Moreover, the contribution and the severity of each transistor variation to $\sigma\hbox{SNM are clarified.

Original languageEnglish
Article number6168825
Pages (from-to)1345-1352
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume59
Issue number5
DOIs
Publication statusPublished - 2012 May 1
Externally publishedYes

Keywords

  • Fin-shaped field-effect transistor (FinFET)
  • noise margin
  • static random-access memory (SRAM)
  • variability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Endo, K., O'Uchi, S., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Tsukada, J., Yamauchi, H., & Masahara, M. (2012). A correlative analysis between characteristics of FinFETs and SRAM performance. IEEE Transactions on Electron Devices, 59(5), 1345-1352. [6168825]. https://doi.org/10.1109/TED.2012.2188633