A content addressable memory using magnetic domain wall motion cells

R. Nebashi, N. Sakimura, Y. Tsuji, S. Fukami, H. Honjo, S. Saito, S. Miura, N. Ishiwata, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Citations (Scopus)

Abstract

A 5-ns search operation of a spintronic content addressable memory (Spin-CAM) was demonstrated, and the speed was the fastest to date. The CAM macro, with a capacity of 16 kb, was fabricated using 90-nm CMOS and domain wall (DW) motion processes. The operating speed was comparable to that of SRAM-based CAM. We also propose a CAM which has multiple contexts by improving the CAM cell circuit to enhance the SoC's performance. The estimated cell area is 3.5 μm2, which is less than that of an SRAM-based CAM cell, when a four-context CAM is designed.

Original languageEnglish
Title of host publication2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers
Pages300-301
Number of pages2
Publication statusPublished - 2011 Sep 16
Event2011 Symposium on VLSI Circuits, VLSIC 2011 - Kyoto, Japan
Duration: 2011 Jun 152011 Jun 17

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other2011 Symposium on VLSI Circuits, VLSIC 2011
Country/TerritoryJapan
CityKyoto
Period11/6/1511/6/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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