TY - JOUR
T1 - A computer simulation of the recombination process at compound semiconductor surfaces and hetero-interfaces
AU - Saitoh, Toshiya
AU - Hasegawa, Hideki
AU - Konishi, Seiichi
AU - Ohno, Hideo
N1 - Funding Information:
The present work is supported by a Grant-in-Aid for Specially Promoted Research from Ministry of Education, Science and Culture (# 60065002).
PY - 1990/1
Y1 - 1990/1
N2 - The complex recombination process through quantum states at compound semiconductor surfaces and hetero-interfaces is analyzed in a unified manner on the computer, using the unified disorder induced gap state (DIGS) model. Recombination through uniformly distributed states at surfaces and hetero-interfaces, and that through U-shaped surface states at GaAs surfaces subjected to various surface treatments, are specifically analyzed. The result indicates that the effective surface recombination velocity is not constant, but is strongly dependent on the excitation intensity and the location of charge neutrality level, EHO. PL intensity enhancement after photochemical oxidation in water and sulfur treatments (Na2S, (NH4)2S) is shown to be not due to reduction of the durface states, but due to the generation of a fixed charge, whereas photochemical HCl treatment reduces the surface states significantly.
AB - The complex recombination process through quantum states at compound semiconductor surfaces and hetero-interfaces is analyzed in a unified manner on the computer, using the unified disorder induced gap state (DIGS) model. Recombination through uniformly distributed states at surfaces and hetero-interfaces, and that through U-shaped surface states at GaAs surfaces subjected to various surface treatments, are specifically analyzed. The result indicates that the effective surface recombination velocity is not constant, but is strongly dependent on the excitation intensity and the location of charge neutrality level, EHO. PL intensity enhancement after photochemical oxidation in water and sulfur treatments (Na2S, (NH4)2S) is shown to be not due to reduction of the durface states, but due to the generation of a fixed charge, whereas photochemical HCl treatment reduces the surface states significantly.
UR - http://www.scopus.com/inward/record.url?scp=0024767849&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024767849&partnerID=8YFLogxK
U2 - 10.1016/0169-4332(89)90091-3
DO - 10.1016/0169-4332(89)90091-3
M3 - Article
AN - SCOPUS:0024767849
SN - 0169-4332
VL - 41-42
SP - 402
EP - 406
JO - Applied Surface Science
JF - Applied Surface Science
IS - C
ER -