A computer analysis of effects of annealing on Inp insulator-semiconductor interface properties using mis c-v curves

Li He, Hideki Hasegawa, Takayuki Sawada, Hideo Ohno

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The effects of annealing on the distributions of interface states at the I-S interface were investigated by analyzing the C-V characteristics of as-grown and annealed Al2O3native oxide/InP MIS capacitors using a self-consistent computer simulation program. It is shown that interface states form a continuum of donor-like and acceptor-like states continuously distributed both in energy and in space. The state density distribution before and after annealing maintains the same functional form, which is U-shaped in energy and exponentially decaying in space.The charge neutrality point dividing donor-like and acceptor-like states occurs at the U-shaped minimum.Annealing reduces the spatial extension of states, the U-shape curvature and the magnitude of density.However, the energy position of the charge neutrality point remains remarkably invariant.

Original languageEnglish
Pages (from-to)512-521
Number of pages10
JournalJapanese journal of applied physics
Volume27
Issue number4R
DOIs
Publication statusPublished - 1988 Apr
Externally publishedYes

Keywords

  • Annealing
  • C-V curve
  • Compound semiconductor
  • Hysteresis
  • Inp
  • Interface state
  • MIS structure

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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