A comprehensive study of charge trapping in organic field-effect devices with promising semiconductors and different contact metals by displacement current measurements

Sibani Bisoyi, Reinhold Rödel, Ute Zschieschang, Myeong Jin Kang, Kazuo Takimiya, Hagen Klauk, Shree Prakash Tiwari

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

A systematic and comprehensive study on the charge-carrier injection and trapping behavior was performed using displacement current measurements in long-channel capacitors based on four promising small-molecule organic semiconductors (pentacene, DNTT, C10-DNTT and DPh-DNTT). In thin-film transistors, these semiconductors showed charge-carrier mobilities ranging from 1.0 to 7.8 cm2 V-1 s-1. The number of charges injected into and extracted from the semiconductor and the density of charges trapped in the device during each measurement were calculated from the displacement current characteristics and it was found that the density of trapped charges is very similar in all devices and of the order 1012 cm-2, despite the fact that the four semiconductors show significantly different charge-carrier mobilities. The choice of the contact metal (Au, Ag, Cu, Pd) was also found to have no significant effect on the trapping behavior.

Original languageEnglish
Article number025011
JournalSemiconductor Science and Technology
Volume31
Issue number2
DOIs
Publication statusPublished - 2015 Dec 21
Externally publishedYes

Keywords

  • charge trapping
  • displacement current measurements
  • organic semiconductors
  • thin-film transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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