A complementary metal-oxide-semiconductor image sensor with 2.0 e - random noise and 110 ke- full well capacity and noise measurement of pixel transistors using column source follower readout circuits

Takahiro Kohara, Woonghee Lee, Koichi Mizobuchi, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A low noise complementary metal-oxide-semiconductor (CMOS) image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-in., 4.5-mm pitch, 800H × 600V pixels CMOS image sensor fabricated by a 0.18-μm 2-poly 3-metal CMOS technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 104-μV/e - conversion gain, 2.0-e- total random noise, 110,000-e- full well capacity and 95-dB dynamic range in one exposure. Moreover, the random noise of the developed readout circuits has been reduced to 0.5-e- without degradation of saturation performance. As a result, the behaviors of pixel noises have been accurately measured. Operating condition dependency of the random noise generated by pixel transistors has been measured by using the developed readout circuits. In addition, considering the result of the measurements, we optimize pixel operating condition.

Original languageEnglish
Article number04DE02
JournalJapanese journal of applied physics
Volume49
Issue number4 PART 2
DOIs
Publication statusPublished - 2010 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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