A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors

Tetsuro Hayashida, Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinich O'Uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Eiichi Suzuki, Atsushi Ogura, Meishoku Masahara

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11 Citations (Scopus)

Abstract

Sputtered titanium nitride (TiN) metal gates fabricated at different nitrogen gas flow ratios [RN = N2/(N2 + Ar)] from 17 to 100% have systematically been investigated, and the RN dependence on the electrical characteristics of fabricated TiN metal gate bulk planar metal- oxide-semiconductor field-effect transistors (MOSFETs) and fin-type MOSFETs (FinFETs) are clarified. It is experimentally found that the electrical characteristics of FinFETs such as subthreshold slope (S-slope) and mobility are almost independent of RN, while those of bulk planar MOSFETs markedly deteriorate with increasing RN. These experimental results are discussed from the viewpoint of the device structure differences and the direction of energetic nitrogen atoms in sputtering. The threshold voltage (Vth) of FinFETs can be adjusted to about 100 mV by controlling RN without device performance degradation. These results are very useful in setting an appropriate Vth for TiN gate-last FinFETs.

Original languageEnglish
JournalJapanese journal of applied physics
Volume48
Issue number5 PART 2
DOIs
Publication statusPublished - 2009 May 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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