Abstract
In this paper, a compact model of phase-change memory based on the rate equations of crystallization and amorphization will be presented and confirmed by measurement. The model reproduces the nonlinear current-voltage behavior of both the "set" and "reset" states. Temperatures in the phase-change layer are calculated by a thermal equivalent circuit. The temperature-dependent crystallization and amorphization of the phase-change layer are taken into account in order to express resistance changes between the "set" and "reset"states. The crystallization rate is calculated based on the nucleation-growth model. The heat of fusion (the latent heat) is taken into account in the calculation of the amorphization rate.
Original language | English |
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Pages (from-to) | 1672-1681 |
Number of pages | 10 |
Journal | IEEE Transactions on Electron Devices |
Volume | 55 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2008 Jul |
Externally published | Yes |
Keywords
- Amorphous semiconductors
- Crystal growth
- Phase transformers
- Resistance heating
- Semiconductor-device modeling
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering