A compact model of phase-change memory based on rate equations of crystallization and amorphization

Ken'ichiro Sonoda, Atsushi Sakai, Masahiro Moniwa, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)

Abstract

In this paper, a compact model of phase-change memory based on the rate equations of crystallization and amorphization will be presented and confirmed by measurement. The model reproduces the nonlinear current-voltage behavior of both the "set" and "reset" states. Temperatures in the phase-change layer are calculated by a thermal equivalent circuit. The temperature-dependent crystallization and amorphization of the phase-change layer are taken into account in order to express resistance changes between the "set" and "reset"states. The crystallization rate is calculated based on the nucleation-growth model. The heat of fusion (the latent heat) is taken into account in the calculation of the amorphization rate.

Original languageEnglish
Pages (from-to)1672-1681
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume55
Issue number7
DOIs
Publication statusPublished - 2008 Jul
Externally publishedYes

Keywords

  • Amorphous semiconductors
  • Crystal growth
  • Phase transformers
  • Resistance heating
  • Semiconductor-device modeling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'A compact model of phase-change memory based on rate equations of crystallization and amorphization'. Together they form a unique fingerprint.

Cite this