A compact model of phase-change memory based on rate equations of crystallization and amorphization

Ken'ichiro Sonoda; Atsushi Sakai; Masahiro Moniwa; Kiyoshi Ishikawa; Osamu Tsuchiya; Yasuo Inoue

doi:10.1109/TED.2008.923740

A compact model of phase-change memory based on rate equations of crystallization and amorphization

Ken'ichiro Sonoda, Atsushi Sakai, Masahiro Moniwa, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

In this paper, a compact model of phase-change memory based on the rate equations of crystallization and amorphization will be presented and confirmed by measurement. The model reproduces the nonlinear current-voltage behavior of both the "set" and "reset" states. Temperatures in the phase-change layer are calculated by a thermal equivalent circuit. The temperature-dependent crystallization and amorphization of the phase-change layer are taken into account in order to express resistance changes between the "set" and "reset"states. The crystallization rate is calculated based on the nucleation-growth model. The heat of fusion (the latent heat) is taken into account in the calculation of the amorphization rate.

Original language	English
Pages (from-to)	1672-1681
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	7
DOIs	https://doi.org/10.1109/TED.2008.923740
Publication status	Published - 2008 Jul
Externally published	Yes

Keywords

Amorphous semiconductors
Crystal growth
Phase transformers
Resistance heating
Semiconductor-device modeling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2008.923740

Cite this

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AU - Sonoda, Ken'ichiro

AU - Sakai, Atsushi

AU - Moniwa, Masahiro

AU - Ishikawa, Kiyoshi

AU - Tsuchiya, Osamu

AU - Inoue, Yasuo

PY - 2008/7

Y1 - 2008/7

N2 - In this paper, a compact model of phase-change memory based on the rate equations of crystallization and amorphization will be presented and confirmed by measurement. The model reproduces the nonlinear current-voltage behavior of both the "set" and "reset" states. Temperatures in the phase-change layer are calculated by a thermal equivalent circuit. The temperature-dependent crystallization and amorphization of the phase-change layer are taken into account in order to express resistance changes between the "set" and "reset"states. The crystallization rate is calculated based on the nucleation-growth model. The heat of fusion (the latent heat) is taken into account in the calculation of the amorphization rate.

AB - In this paper, a compact model of phase-change memory based on the rate equations of crystallization and amorphization will be presented and confirmed by measurement. The model reproduces the nonlinear current-voltage behavior of both the "set" and "reset" states. Temperatures in the phase-change layer are calculated by a thermal equivalent circuit. The temperature-dependent crystallization and amorphization of the phase-change layer are taken into account in order to express resistance changes between the "set" and "reset"states. The crystallization rate is calculated based on the nucleation-growth model. The heat of fusion (the latent heat) is taken into account in the calculation of the amorphization rate.

KW - Amorphous semiconductors

KW - Crystal growth

KW - Phase transformers

KW - Resistance heating

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A compact model of phase-change memory based on rate equations of crystallization and amorphization

Abstract

Keywords

ASJC Scopus subject areas

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