A compact model of phase-change memory based on rate equations of crystallization and amorphization

Ken'ichiro Sonoda, Atsushi Sakai, Masahiro Moniwa, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue

    Research output: Contribution to journalArticlepeer-review

    52 Citations (Scopus)

    Abstract

    In this paper, a compact model of phase-change memory based on the rate equations of crystallization and amorphization will be presented and confirmed by measurement. The model reproduces the nonlinear current-voltage behavior of both the "set" and "reset" states. Temperatures in the phase-change layer are calculated by a thermal equivalent circuit. The temperature-dependent crystallization and amorphization of the phase-change layer are taken into account in order to express resistance changes between the "set" and "reset"states. The crystallization rate is calculated based on the nucleation-growth model. The heat of fusion (the latent heat) is taken into account in the calculation of the amorphization rate.

    Original languageEnglish
    Pages (from-to)1672-1681
    Number of pages10
    JournalIEEE Transactions on Electron Devices
    Volume55
    Issue number7
    DOIs
    Publication statusPublished - 2008 Jul 1

    Keywords

    • Amorphous semiconductors
    • Crystal growth
    • Phase transformers
    • Resistance heating
    • Semiconductor-device modeling

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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