A compact, high-speed, and low-power design for multi-pillar vertical MOSFET's, suppressing characteristic influences by process fluctuation

Koji Sakui, Tetsuo Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Pillar-type MOSFET's were studied for over two decades [1][2], however, recent studies found a more practical, affordable way to manufacture them and extract their performance merits by isolating the pillar body from the substrate with the diffusion region [3][4]. a number of papers have come up for their application to the three dimensional Flash memory cells [5]-[7]. However, due to the device structure of the vertical mosfet, the bottom of its silicon pillar has a certain resistance, which causes the asymmetric source/drain characteristics. Furthermore, the practical circuit design with the vertical MOSFET's has not been investigated in details. Unlike the circuit design with the planar MOSFET's, the channel length of L is defined by the gate material deposition depth in process, and the channel width of W is defined by the number of the silicon pillars with a certain fixed diameter. This paper is devoted to investigating the transistor characteristic influences by the silicon pillar diameter thinning due to the process fluctuation, and proposing the compact, high-speed, and low-power circuit design with multi-pillar vertical MOSFET's [8] in order to suppress the pillar thinning influences.

Original languageEnglish
Title of host publicationProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages30-31
Number of pages2
DOIs
Publication statusPublished - 2010 Oct 20
Event2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan, Province of China
Duration: 2010 Apr 262010 Apr 28

Publication series

NameProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Other

Other2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
CountryTaiwan, Province of China
CityHsin Chu
Period10/4/2610/4/28

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture

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