The lack of energy reference level for deep levels, which has been one of the major difficulties in previous deep level research, is overcome by Hasegawa-Ohno’s hybrid orbital energy level, EHO recently found for insulator-semiconductor and metal-semiconductor interfaces. EHO is shown to serve as the energy reference for DX centers and EL2 donors in the major III-V compound semiconductors and their alloys. Based on the novel alignment of DX centers with respect to Eho, a proposal is made that the DX center is related to the anti-bonding state formed by the substitutional donor impurity atom itself.
ASJC Scopus subject areas
- Physics and Astronomy(all)