A common energy reference for dx centers and el2 levels in iii-v compound semiconductors

Hideki Hasegawa, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

The lack of energy reference level for deep levels, which has been one of the major difficulties in previous deep level research, is overcome by Hasegawa-Ohno’s hybrid orbital energy level, EHO recently found for insulator-semiconductor and metal-semiconductor interfaces. EHO is shown to serve as the energy reference for DX centers and EL2 donors in the major III-V compound semiconductors and their alloys. Based on the novel alignment of DX centers with respect to Eho, a proposal is made that the DX center is related to the anti-bonding state formed by the substitutional donor impurity atom itself.

Original languageEnglish
Pages (from-to)L319-L322
JournalJapanese journal of applied physics
Volume25
Issue number4 A
DOIs
Publication statusPublished - 1986 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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