A combinatorial study of metal gate/HfO2 MOSCAPS

M. L. Green; K. S. Chang; I. Takeuchi; T. Chikyow

doi:10.1149/1.2355725

A combinatorial study of metal gate/HfO₂ MOSCAPS

M. L. Green, K. S. Chang, I. Takeuchi, T. Chikyow

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Conference article › peer-review

Abstract

Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO₂ using magnetron co-sputtering, to investigate flat-band voltage shift (ΔV_fb) and leakage current density (J_L) variations. Wavelength dispersive spectroscopy (WDS) results show that compositions containing up to 90% of Ni and Ti, and 75% of Pt were attained in the library. A more negative ΔV_fb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller work function (Φ_m) near the Ti-rich corners and higher Φ_m near Ni- and Pt-rich corners. Measured J_L values are consistent with the observed ΔV_fb variations. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	341-350
Number of pages	10
Journal	ECS Transactions
Volume	3
Issue number	3
DOIs	https://doi.org/10.1149/1.2355725
Publication status	Published - 2006 Dec 1
Event	Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

ASJC Scopus subject areas

Engineering(all)

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title = "A combinatorial study of metal gate/HfO2 MOSCAPS",

abstract = "Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (ΔVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that compositions containing up to 90% of Ni and Ti, and 75% of Pt were attained in the library. A more negative ΔVfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller work function (Φm) near the Ti-rich corners and higher Φm near Ni- and Pt-rich corners. Measured JL values are consistent with the observed ΔVfb variations. copyright The Electrochemical Society.",

author = "Green, {M. L.} and Chang, {K. S.} and I. Takeuchi and T. Chikyow",

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AU - Green, M. L.

AU - Chang, K. S.

AU - Takeuchi, I.

AU - Chikyow, T.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (ΔVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that compositions containing up to 90% of Ni and Ti, and 75% of Pt were attained in the library. A more negative ΔVfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller work function (Φm) near the Ti-rich corners and higher Φm near Ni- and Pt-rich corners. Measured JL values are consistent with the observed ΔVfb variations. copyright The Electrochemical Society.

AB - Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (ΔVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that compositions containing up to 90% of Ni and Ti, and 75% of Pt were attained in the library. A more negative ΔVfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller work function (Φm) near the Ti-rich corners and higher Φm near Ni- and Pt-rich corners. Measured JL values are consistent with the observed ΔVfb variations. copyright The Electrochemical Society.

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ER -

A combinatorial study of metal gate/HfO₂ MOSCAPS

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