A combinatorial methodology for optimizing oxide/semiconductor interface with atomic interfacial layers

Toyohiro Chikyow, Parhat Ahmet, Kioyomi Nakajima, Takashi Koida, Masahiro Takakura, Maoru Yoshimoto, Hideomi Koinuma

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A combinatorial methodology was employed to investigate oxide materials/semiconductor interfaces for future devices. For this purpose, a temperature gradient pulsed laser deposition to find optimum growth condition and transmission electron microscopy for structure and composition analysis were used. Newly proposed the "micro sampling method" with focused ion beam was applied to fabricate the specimen from the interested region in a shorter term. In growing oxide materials on Si substrate, a proper termination was found to be inevitable for avoiding surface oxidation. Arsenic was used to obtain a durable surface of Si in oxygen atmosphere. CeO2 and SrTiO3 were tried to grow and the interfaces were characterized using these method.

Original languageEnglish
Pages (from-to)1-16
Number of pages16
JournalProceedings of SPIE-The International Society for Optical Engineering
Volume4281
DOIs
Publication statusPublished - 2001 Jan 1
Externally publishedYes

Keywords

  • CeO2
  • Combinatorial
  • High dielectric
  • Oxide
  • Si
  • SrTiO3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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