A combinatorial approach in oxide/semiconductor interface research for future electronic devices

Toyohiro Chikyow, Parhat Ahmet, Kioyomi Nakajima, Takashi Koida, Masahiro Takakura, Maoru Yoshimoto, Hideomi Koinuma

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


A combinatorial methodology was employed to investigate oxide/semiconductor interfaces for future devices using a combination of temperature gradient pulsed laser deposition and transmission electron microscopy. In growing oxide materials on Si substrate, a proper termination was found to be inevitable for avoiding surface oxidation. For this purpose, arsenic was used to obtain a durable surface of Si in oxygen atmosphere. On this surface, CeO 2 and SrTiO 3 were grown to study interface stability and phenomena. CeO 2 and SrTiO 3 were found to have abrupt structures at 200 °C. At a higher temperature at 550 °C, an amorphous interfacial layer was formed for the SrTiO 3 /Si interface. From the results, surface termination and the growth temperature were identified as factors governing the process of abrupt interface formation.

Original languageEnglish
Pages (from-to)284-291
Number of pages8
JournalApplied Surface Science
Issue number3-4
Publication statusPublished - 2002 Apr 28
Externally publishedYes


  • Combinatorial
  • Oxide
  • Reaction
  • Si
  • Surface
  • Termination

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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