A CMOS Proximity Capacitance Image Sensor with 16μ m Pixel Pitch, 0.1aF Detection Accuracy and 60 Frames per Second

M. Yamamoto, R. Kuroda, M. Suzuki, T. Goto, H. Hamori, S. Murakami, T. Yasuda, S. Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 16μ m pixel pitch 60 frames per second CMOS proximity capacitance image sensor fabricated by a 0.18μ m CMOS process technology is presented. By the introduction of noise cancelling operation, both fixed pattern noise and kTC noise are significantly reduced, resulting in the 0.1aF (10 -19 F) detection accuracy. Proximity capacitance imaging results using the developed sensor are also demonstrated.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages29.1.1-29.1.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 2019 Jan 16
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 2018 Dec 12018 Dec 5

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period18/12/118/12/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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