A CMOS image sensor with 2.5-e- random noise and 110-ke - full well capacity using column source follower readout circuits

Takahiro Kohara; Woonghee Lee; Nana Akahane; Koichi Mizobuchi; Shigetoshi Sugawa

A CMOS image sensor with 2.5-e^- random noise and 110-ke ^- full well capacity using column source follower readout circuits

Takahiro Kohara, Woonghee Lee, Nana Akahane, Koichi Mizobuchi, Shigetoshi Sugawa

ENG - Management Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-μm pitch, 800^H × 600V pixels CMOS image sensor fabricated by a 0.18-μm 2P3M technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 100-μV/e ^- conversion gain, 2.5-e^- random noise, 110,000-e ^- full well capacity and 93-dB dynamic range in one exposure.

Original language	English
Title of host publication	2009 Symposium on VLSI Circuits
Pages	182-183
Number of pages	2
Publication status	Published - 2009 Nov 18
Event	2009 Symposium on VLSI Circuits - Kyoto, Japan Duration: 2009 Jun 16 → 2009 Jun 18

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other	2009 Symposium on VLSI Circuits
Country	Japan
City	Kyoto
Period	09/6/16 → 09/6/18

Keywords

CMOS image sensor
Column amplifier
Full well capacity and lateral overflow integration
Noise

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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A CMOS image sensor with 2.5-e^- random noise and 110-ke ^- full well capacity using column source follower readout circuits. / Kohara, Takahiro; Lee, Woonghee; Akahane, Nana; Mizobuchi, Koichi; Sugawa, Shigetoshi.

2009 Symposium on VLSI Circuits. 2009. p. 182-183 5205397 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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abstract = "A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-μm pitch, 800H × 600V pixels CMOS image sensor fabricated by a 0.18-μm 2P3M technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 100-μV/e - conversion gain, 2.5-e- random noise, 110,000-e - full well capacity and 93-dB dynamic range in one exposure.",

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AU - Sugawa, Shigetoshi

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