A CMOS image sensor with 2.5-e- random noise and 110-ke - full well capacity using column source follower readout circuits

Takahiro Kohara, Woonghee Lee, Nana Akahane, Koichi Mizobuchi, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-μm pitch, 800H × 600V pixels CMOS image sensor fabricated by a 0.18-μm 2P3M technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 100-μV/e - conversion gain, 2.5-e- random noise, 110,000-e - full well capacity and 93-dB dynamic range in one exposure.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Circuits
Number of pages2
Publication statusPublished - 2009 Nov 18
Event2009 Symposium on VLSI Circuits - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers


Other2009 Symposium on VLSI Circuits


  • CMOS image sensor
  • Column amplifier
  • Full well capacity and lateral overflow integration
  • Noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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