A CMOS image sensor with 240 μv/e- conversion gain, 200 ke- full well capacity, 190-1000 nm spectral response and high robustness to UV light

Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The structure and performances of a CMOS image sensor fabricated by integrating technologies in a series of process flow that achieve wide spectral response, high robustness to ultraviolet (UV) light, high conversion gain (CG) and high full well capacity (FWC) is described. For PD junction formation, a high concentration p+ layer with steep dopant concentration profile was formed on a thick p-epitaxial layer. The concentration of the surface p+ layer was tuned sufficiently high in order to maintain the high UV light sensitivity and dark current against the deuterium lamp irradiation. For the FD structure, a lightly doped drain implantation before sidewall formation was omitted to reduce gate overlap capacitance. A CMOS image sensor using a 0.18 μm CMOS process technology achieved a high CG of 240 μV/e-, a high FWC of 200 ke-, a wide spectral response for 190-1000 nm and a high robustness to deuterium lamp irradiation stress.

Original languageEnglish
Pages (from-to)116-122
Number of pages7
JournalITE Transactions on Media Technology and Applications
Volume4
Issue number2
DOIs
Publication statusPublished - 2016

Keywords

  • CMOS image sensor
  • Conversion gain
  • Full well capacity
  • Robustness to UV light
  • Spectral response

ASJC Scopus subject areas

  • Signal Processing
  • Media Technology
  • Computer Graphics and Computer-Aided Design

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