TY - GEN
T1 - A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits
AU - Kohara, Takahiro
AU - Lee, Woonghee
AU - Mizobuchi, Koichi
AU - Sugawa, Shigetoshi
PY - 2010/4/28
Y1 - 2010/4/28
N2 - A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 with a lateral overflow integration capacitor technology. The 1/4-inch, SVGA CMOS image sensor has achieved 0.98 column readout gain, 100-μV/e- conversion gain, 2.0-e- total random noise, 0.5-e- in readout circuits, 110,000-e- full well capacity and 95-dB dynamic range. Moreover, we measure the pixel noises by using developed image sensor and optimize pixel operating condition.
AB - A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 with a lateral overflow integration capacitor technology. The 1/4-inch, SVGA CMOS image sensor has achieved 0.98 column readout gain, 100-μV/e- conversion gain, 2.0-e- total random noise, 0.5-e- in readout circuits, 110,000-e- full well capacity and 95-dB dynamic range. Moreover, we measure the pixel noises by using developed image sensor and optimize pixel operating condition.
UR - http://www.scopus.com/inward/record.url?scp=77951249378&partnerID=8YFLogxK
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U2 - 10.1109/ASPDAC.2010.5419869
DO - 10.1109/ASPDAC.2010.5419869
M3 - Conference contribution
AN - SCOPUS:77951249378
SN - 9781424457656
T3 - Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC
SP - 345
EP - 346
BT - 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010
T2 - 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010
Y2 - 18 January 2010 through 21 January 2010
ER -