A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits

Takahiro Kohara, Woonghee Lee, Koichi Mizobuchi, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 with a lateral overflow integration capacitor technology. The 1/4-inch, SVGA CMOS image sensor has achieved 0.98 column readout gain, 100-μV/e- conversion gain, 2.0-e- total random noise, 0.5-e- in readout circuits, 110,000-e- full well capacity and 95-dB dynamic range. Moreover, we measure the pixel noises by using developed image sensor and optimize pixel operating condition.

Original languageEnglish
Title of host publication2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010
Pages345-346
Number of pages2
DOIs
Publication statusPublished - 2010 Apr 28
Event2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010 - Taipei, Taiwan, Province of China
Duration: 2010 Jan 182010 Jan 21

Publication series

NameProceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC

Other

Other2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010
CountryTaiwan, Province of China
CityTaipei
Period10/1/1810/1/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design

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