A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits

Takahiro Kohara; Woonghee Lee; Koichi Mizobuchi; Shigetoshi Sugawa

doi:10.1109/ASPDAC.2010.5419869

A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits

Takahiro Kohara, Woonghee Lee, Koichi Mizobuchi, Shigetoshi Sugawa

ENG - Management Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 with a lateral overflow integration capacitor technology. The 1/4-inch, SVGA CMOS image sensor has achieved 0.98 column readout gain, 100-μV/e^- conversion gain, 2.0-e^- total random noise, 0.5-e^- in readout circuits, 110,000-e^- full well capacity and 95-dB dynamic range. Moreover, we measure the pixel noises by using developed image sensor and optimize pixel operating condition.

Original language	English
Title of host publication	2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010
Pages	345-346
Number of pages	2
DOIs	https://doi.org/10.1109/ASPDAC.2010.5419869
Publication status	Published - 2010 Apr 28
Event	2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010 - Taipei, Taiwan, Province of China Duration: 2010 Jan 18 → 2010 Jan 21

Publication series

Name	Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC

Other

Other	2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010
Country	Taiwan, Province of China
City	Taipei
Period	10/1/18 → 10/1/21

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Computer Graphics and Computer-Aided Design

Access to Document

10.1109/ASPDAC.2010.5419869

Fingerprint Dive into the research topics of 'A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits'. Together they form a unique fingerprint.

Cite this

Kohara, T., Lee, W., Mizobuchi, K., & Sugawa, S. (2010). A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits. In 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010 (pp. 345-346). [5419869] (Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC). https://doi.org/10.1109/ASPDAC.2010.5419869

A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits. / Kohara, Takahiro; Lee, Woonghee; Mizobuchi, Koichi; Sugawa, Shigetoshi.

2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010. 2010. p. 345-346 5419869 (Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kohara, T, Lee, W, Mizobuchi, K & Sugawa, S 2010, A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits. in 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010., 5419869, Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC, pp. 345-346, 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010, Taipei, Taiwan, Province of China, 10/1/18. https://doi.org/10.1109/ASPDAC.2010.5419869

Kohara T, Lee W, Mizobuchi K, Sugawa S. A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits. In 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010. 2010. p. 345-346. 5419869. (Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC). https://doi.org/10.1109/ASPDAC.2010.5419869

Kohara, Takahiro ; Lee, Woonghee ; Mizobuchi, Koichi ; Sugawa, Shigetoshi. / A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits. 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010. 2010. pp. 345-346 (Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC).

@inproceedings{9d81d8a42135450699210c0608d93f69,

title = "A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits",

abstract = "A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 with a lateral overflow integration capacitor technology. The 1/4-inch, SVGA CMOS image sensor has achieved 0.98 column readout gain, 100-μV/e- conversion gain, 2.0-e- total random noise, 0.5-e- in readout circuits, 110,000-e- full well capacity and 95-dB dynamic range. Moreover, we measure the pixel noises by using developed image sensor and optimize pixel operating condition.",

author = "Takahiro Kohara and Woonghee Lee and Koichi Mizobuchi and Shigetoshi Sugawa",

year = "2010",

month = apr,

day = "28",

doi = "10.1109/ASPDAC.2010.5419869",

language = "English",

isbn = "9781424457656",

series = "Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC",

pages = "345--346",

booktitle = "2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010",

note = "2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010 ; Conference date: 18-01-2010 Through 21-01-2010",

}

TY - GEN

T1 - A CMOS image sensor with 2.0-e- random noise and 110-ke - full well capacity using column source follower readout circuits

AU - Kohara, Takahiro

AU - Lee, Woonghee

AU - Mizobuchi, Koichi

AU - Sugawa, Shigetoshi

PY - 2010/4/28

Y1 - 2010/4/28

N2 - A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 with a lateral overflow integration capacitor technology. The 1/4-inch, SVGA CMOS image sensor has achieved 0.98 column readout gain, 100-μV/e- conversion gain, 2.0-e- total random noise, 0.5-e- in readout circuits, 110,000-e- full well capacity and 95-dB dynamic range. Moreover, we measure the pixel noises by using developed image sensor and optimize pixel operating condition.

AB - A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 with a lateral overflow integration capacitor technology. The 1/4-inch, SVGA CMOS image sensor has achieved 0.98 column readout gain, 100-μV/e- conversion gain, 2.0-e- total random noise, 0.5-e- in readout circuits, 110,000-e- full well capacity and 95-dB dynamic range. Moreover, we measure the pixel noises by using developed image sensor and optimize pixel operating condition.

UR - http://www.scopus.com/inward/record.url?scp=77951249378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951249378&partnerID=8YFLogxK

U2 - 10.1109/ASPDAC.2010.5419869

DO - 10.1109/ASPDAC.2010.5419869

M3 - Conference contribution

AN - SCOPUS:77951249378

SN - 9781424457656

T3 - Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC

SP - 345

EP - 346

BT - 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010

T2 - 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010

Y2 - 18 January 2010 through 21 January 2010

ER -