A CMOS compatible low temperature process for photonic crystal MEMS scanner

K. Takahashi, I. W. Jung, A. Higo, Y. Mita, H. Fujita, H. Toshiyoshi, O. Solgaard

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We report a CMOS-compatible low-temperature process for electrostatic MEMS scanner with highly reflective photonic crystal mirror in the near IR region. The photonic crystal was made in the EB-evaporated amorphous silicon layer deposited on the MEMS scanner. The reflectivity was found over 90 % at 1.55 μm wavelength. Mechanical angle displacement of 6 degree was obtained with an applied voltage of 25 Vpp at the resonance frequency of 3.36 kHz.

    Original languageEnglish
    Title of host publication2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009
    Pages77-78
    Number of pages2
    DOIs
    Publication statusPublished - 2009 Dec 16
    Event2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009 - Clearwater, FL, United States
    Duration: 2009 Aug 172009 Aug 20

    Publication series

    Name2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009

    Other

    Other2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPTMEMS 2009
    CountryUnited States
    CityClearwater, FL
    Period09/8/1709/8/20

    Keywords

    • CMOS compatible process
    • MEMS electrostatic scanner
    • Photonic Crystal

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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