A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

Eiji Yoshida, Tetsu Tanaka

Research output: Contribution to journalArticlepeer-review

102 Citations (Scopus)

Abstract

A capacitorless one-transistor (1T)-dynamic random-access memory (DRAM) cell using gate-induced drain-leakage (GIDL) current for write operation was demonstrated. Compared with the conventional write operation with impact-ionization (II) current, the write operation with GIDL current achieves power consumption that is lower by four orders of magnitude and a write speed within several nanoseconds. The capacitorless 1T DRAM is the most promising technology for high-performance embedded-DRAM large-scale integration.

Original languageEnglish
Pages (from-to)692-697
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume53
Issue number4
DOIs
Publication statusPublished - 2006 Apr
Externally publishedYes

Keywords

  • Dynamic random-access memory (DRAM)
  • Embedded memory
  • Floating-body effect
  • Gate-induced drain leakage (GIDL)
  • Silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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