A capacitive silicon resonator with a movable electrode structure for gap width reduction

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

This paper presents a capacitive silicon resonator with movable electrode structures to reduce the motional resistance for lower insertion loss and lower phase noise, and also increase the tuning frequency range for the compensation of temperature drift of the silicon oscillator. The resonant frequency of the fabricated device with a length of 500 m, width of 440 m and thickness of 5 m is observed at 9.65 MHz, and the quality factor is 49 000. Using an electrostatically drived movable electrode structure, it is shown that the motional resistance is reduced by 200 times, the output signal (insertion loss) is increased by 21 dB and the tuning characteristic of the frequency is also increased by seven times over that of the structures without movable electrodes.

Original languageEnglish
Article number025006
JournalJournal of Micromechanics and Microengineering
Volume24
Issue number2
DOIs
Publication statusPublished - 2014 Feb 1

Keywords

  • capacitive silicon resonator
  • finite element method
  • low temperature co-fired ceramic
  • movable electrode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A capacitive silicon resonator with a movable electrode structure for gap width reduction'. Together they form a unique fingerprint.

  • Cite this