A BIST scheme using microprogram ROM for large capacity memories

Hiroki Koike, Toshio Takeshima, Masahide Takada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Citations (Scopus)

Abstract

A practical microprogram ROM BIST (built-in self-test) scheme suitable for LSI memories is proposed. This BIST can be used to install N-pattern and N2-pattern test procedures, using BIST circuits with 12-word × 10-b and 16-word × 16-b ROMs, respectively. As a practical test procedure, a data retention test, in which BIST circuits with an 8-word × 11-b ROM were used, was investigated. BIST circuit area overheads for the above three test patterns for 16-Mb DRAMs are less than 1%, 2%, and 1.5%, respectively. A testing method for the BIST circuits themselves, with no special BIST circuit overhead, is also proposed for more practical applications. The measured operational margin for a 16-Mb DRAM using the BIST showed a good agreement with that using an LSI tester.

Original languageEnglish
Title of host publicationDigest of Papers - International Test Conference
PublisherPubl by IEEE
Pages815-822
Number of pages8
ISBN (Print)0818620641
Publication statusPublished - 1990 Sep 1
Externally publishedYes
EventProceedings - International Test Conference 1990 - Washington, DC, USA
Duration: 1990 Sep 101990 Sep 14

Publication series

NameDigest of Papers - International Test Conference
ISSN (Print)0743-1686

Other

OtherProceedings - International Test Conference 1990
CityWashington, DC, USA
Period90/9/1090/9/14

ASJC Scopus subject areas

  • Engineering(all)

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