Abstract
A new type of bipolar image detector has been developed which consists of bipolar sensor cells bipolar frame memory cells and signal transfer circuits. The imager with 100 H × 70 V pixels was designed to detect near-infrared LED rays exactly and rapidly and was fabricated using 2-μm Bi-CMOS process. The device utilizing operations specific to bipolar cells amplifies signal charges and cancels noises to have a high signal-to-noise ratio (S/N) immune to a long time hold. It also offers several novel functions such as cancellation of external light signal preliminary fast readout and main readout of a selected part. Equipped with peripheral circuits the chip is 3.66 × 3.7 mm in size and is very suitable for image processing use.
| Original language | English |
|---|---|
| Pages (from-to) | 1769-1776 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 44 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1997 Dec 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Shinohara, M., Sugawa, S., Nakamura, Y., & Ohmi, T. (1997). A bipolar image detector with smart functions. IEEE Transactions on Electron Devices, 44(10), 1769-1776. https://doi.org/10.1109/16.628835