A new type of bipolar image detector has been developed which consists of bipolar sensor cells bipolar frame memory cells and signal transfer circuits. The imager with 100 H × 70 V pixels was designed to detect near-infrared LED rays exactly and rapidly and was fabricated using 2-μm Bi-CMOS process. The device utilizing operations specific to bipolar cells amplifies signal charges and cancels noises to have a high signal-to-noise ratio (S/N) immune to a long time hold. It also offers several novel functions such as cancellation of external light signal preliminary fast readout and main readout of a selected part. Equipped with peripheral circuits the chip is 3.66 × 3.7 mm in size and is very suitable for image processing use.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering