A bipolar image detector with smart functions

Mahito Shinohara; Shigetoshi Sugawa; Yoshio Nakamura; Tadahiro Ohmi

doi:10.1109/16.628835

A bipolar image detector with smart functions

Mahito Shinohara, Shigetoshi Sugawa, Yoshio Nakamura, Tadahiro Ohmi

ENG - Management Science and Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A new type of bipolar image detector has been developed which consists of bipolar sensor cells bipolar frame memory cells and signal transfer circuits. The imager with 100 H × 70 V pixels was designed to detect near-infrared LED rays exactly and rapidly and was fabricated using 2-μm Bi-CMOS process. The device utilizing operations specific to bipolar cells amplifies signal charges and cancels noises to have a high signal-to-noise ratio (S/N) immune to a long time hold. It also offers several novel functions such as cancellation of external light signal preliminary fast readout and main readout of a selected part. Equipped with peripheral circuits the chip is 3.66 × 3.7 mm in size and is very suitable for image processing use.

Original language	English
Pages (from-to)	1769-1776
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	44
Issue number	10
DOIs	https://doi.org/10.1109/16.628835
Publication status	Published - 1997 Dec 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{9983155b98df4c6790a7b7a113365384,

title = "A bipolar image detector with smart functions",

abstract = "A new type of bipolar image detector has been developed which consists of bipolar sensor cells bipolar frame memory cells and signal transfer circuits. The imager with 100 H × 70 V pixels was designed to detect near-infrared LED rays exactly and rapidly and was fabricated using 2-μm Bi-CMOS process. The device utilizing operations specific to bipolar cells amplifies signal charges and cancels noises to have a high signal-to-noise ratio (S/N) immune to a long time hold. It also offers several novel functions such as cancellation of external light signal preliminary fast readout and main readout of a selected part. Equipped with peripheral circuits the chip is 3.66 × 3.7 mm in size and is very suitable for image processing use.",

author = "Mahito Shinohara and Shigetoshi Sugawa and Yoshio Nakamura and Tadahiro Ohmi",

year = "1997",

month = dec,

day = "1",

doi = "10.1109/16.628835",

language = "English",

volume = "44",

pages = "1769--1776",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - A bipolar image detector with smart functions

AU - Shinohara, Mahito

AU - Sugawa, Shigetoshi

AU - Nakamura, Yoshio

AU - Ohmi, Tadahiro

PY - 1997/12/1

Y1 - 1997/12/1

N2 - A new type of bipolar image detector has been developed which consists of bipolar sensor cells bipolar frame memory cells and signal transfer circuits. The imager with 100 H × 70 V pixels was designed to detect near-infrared LED rays exactly and rapidly and was fabricated using 2-μm Bi-CMOS process. The device utilizing operations specific to bipolar cells amplifies signal charges and cancels noises to have a high signal-to-noise ratio (S/N) immune to a long time hold. It also offers several novel functions such as cancellation of external light signal preliminary fast readout and main readout of a selected part. Equipped with peripheral circuits the chip is 3.66 × 3.7 mm in size and is very suitable for image processing use.

AB - A new type of bipolar image detector has been developed which consists of bipolar sensor cells bipolar frame memory cells and signal transfer circuits. The imager with 100 H × 70 V pixels was designed to detect near-infrared LED rays exactly and rapidly and was fabricated using 2-μm Bi-CMOS process. The device utilizing operations specific to bipolar cells amplifies signal charges and cancels noises to have a high signal-to-noise ratio (S/N) immune to a long time hold. It also offers several novel functions such as cancellation of external light signal preliminary fast readout and main readout of a selected part. Equipped with peripheral circuits the chip is 3.66 × 3.7 mm in size and is very suitable for image processing use.

UR - http://www.scopus.com/inward/record.url?scp=0031246977&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031246977&partnerID=8YFLogxK

U2 - 10.1109/16.628835

DO - 10.1109/16.628835

M3 - Article

AN - SCOPUS:0031246977

VL - 44

SP - 1769

EP - 1776

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -