Abstract
A new type of bipolar image detector has been developed which consists of bipolar sensor cells bipolar frame memory cells and signal transfer circuits. The imager with 100 H × 70 V pixels was designed to detect near-infrared LED rays exactly and rapidly and was fabricated using 2-μm Bi-CMOS process. The device utilizing operations specific to bipolar cells amplifies signal charges and cancels noises to have a high signal-to-noise ratio (S/N) immune to a long time hold. It also offers several novel functions such as cancellation of external light signal preliminary fast readout and main readout of a selected part. Equipped with peripheral circuits the chip is 3.66 × 3.7 mm in size and is very suitable for image processing use.
Original language | English |
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Pages (from-to) | 1769-1776 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 44 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering