A 90nm 12ns 32Mb 2T1MTJ MRAM

R. Nebashi, N. Sakimura, H. Honjo, S. Saito, Y. Ito, S. Miura, Y. Kato, K. Mori, Y. Ozaki, Y. Kobayashi, N. Ohshima, K. Kinoshita, T. Suzuki, K. Nagahara, N. Ishiwata, K. Suemitsu, S. Fukami, H. Hada, T. Sugibayashi, N. Kasai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

44 Citations (Scopus)
Original languageEnglish
Title of host publication2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009
DOIs
Publication statusPublished - 2009 Sep 25
Externally publishedYes
Event2009 IEEE International Solid-State Circuits Conference ISSCC 2009 - San Francisco, CA, United States
Duration: 2009 Feb 82009 Feb 12

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)0193-6530

Other

Other2009 IEEE International Solid-State Circuits Conference ISSCC 2009
CountryUnited States
CitySan Francisco, CA
Period09/2/809/2/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Nebashi, R., Sakimura, N., Honjo, H., Saito, S., Ito, Y., Miura, S., Kato, Y., Mori, K., Ozaki, Y., Kobayashi, Y., Ohshima, N., Kinoshita, K., Suzuki, T., Nagahara, K., Ishiwata, N., Suemitsu, K., Fukami, S., Hada, H., Sugibayashi, T., & Kasai, N. (2009). A 90nm 12ns 32Mb 2T1MTJ MRAM. In 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009 [4977508] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC.2009.4977508