A single-ended circuit using three-terminal magnetic tunnel junction (3T-MTJ) devices is proposed for a compact nonvolatile lookup-table (NVLUT) circuit. The use of 3T-MTJ devices makes a high tunnel magneto-resistance ratio used in the circuit, because read-current path is separated from the write-current path. By utilizing single-ended circuit structure, the NV-LUT circuit becomes quite simple without reference circuit. In fact, the effective area of the proposed 6-input NV-LUT circuit is only 29% the size of the corresponding CMOS-based implementation using twoterminal- MTJ-based nonvolatile static random access memory cells, with a simulation program with integrated circuit emphasis (SPICE) simulation under a 90nm CMOS technology.
ASJC Scopus subject areas
- Physics and Astronomy(all)