A 65 nm CMOS Technology with a High-Performance and Low-Leakage Transistor, a 0.55 μm2 6T-SRAM Cell and Robust Hybrid-ULK/Cu Interconnects for Mobile Multimedia Applications

Satoshi Nakai, Manabu Kojima, Nobuhiro Misawa, Motoshu Miyajima, Satoru Asai, Satoshi Inagaki, Yoshihisa Iba, Takayuki Ohba, Masataka Kase, Hideki Kitada, Shigeo Satoh, Noriyoshi Shimizu, Iwao Sugiura, Fumitoshi Sugimoto, Yuji Setta, Tetsu Tanaka, Naoyoshi Tamura, Masafumi Nakaishi, Yoshihiro Nakata, Junya NakahiraNobuyuki Nishikawa, Akihiro Hasegawa, Shunichi Fukuyama, Kazushi Fujita, Kimihiko Hosaka, Naoto Horiguchi, Hideya Matsuyama, Takayoshi Minami, Masaharu Minamizawa, Hiroshi Morioka, Ei Yano, Akihisa Yamaguchi, Kiyoshi Watanabe, Tomoji Nakamura, Toshihiro Sugii

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)

Abstract

This paper presents a 65 nm CMOS technology for mobile multimedia applications. To reduce capacitance of inter-connects is essential to high-speed data transmission and small power consumption for mobile core chips. We have chosen hybrid ULK structure which consists of NCS (nano-clustering silica (1); k=2.25) at wire level and SiOC (k=2.9) at via level. Although NCS is one of porous materials, NCS/SiOC structure has sufficient mechanical strength to endure CMP pressure and wire bondings. Successfully fabricated 200 nm-pitch hybrid-ULK/Cu interconnects and a high-performance and low-leakage transistor meet the electrical target from circuit requirements. Moreover, an embedded 6T-SRAM with a 0.55 μm2 small cell size has been achieved.

Original languageEnglish
Pages (from-to)285-288
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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