A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching

T. Endoh, S. Togashi, F. Iga, Y. Yoshida, Takashi Ohsawa, H. Koike, S. Fukami, S. Ikeda, N. Kasai, N. Sakimura, T. Hanyu, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

The incubation (transit) time of the perpendicular magnetic tunnel junction (MTJ) is found shorter (longer) than the in-plane MTJ. By making use of the incubation time, a new concept is proposed for MTJ/CMOS hybrid circuits that operate as fast as CMOS circuits without operation power overhead and with negligible MTJ switching error. A nonvolatile latch based on the concept is fabricated in 90nm technology to demonstrate 600MHz stable operation.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 2011 Dec 52011 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period11/12/511/12/7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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    Endoh, T., Togashi, S., Iga, F., Yoshida, Y., Ohsawa, T., Koike, H., Fukami, S., Ikeda, S., Kasai, N., Sakimura, N., Hanyu, T., & Ohno, H. (2011). A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching. In 2011 International Electron Devices Meeting, IEDM 2011 [6131487] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131487