@inproceedings{4958248a4f0c4c37a2cb5d548368bbe0,
title = "A 512kB embedded phase change memory with 416kB/s write throughput at 100μA cell write current",
abstract = "An experimental 512kB embedded PCM uses a current-saving architecture in a 0.13μm 1.5V CMOS. The write scheme features a low-write-current resistive device and achieves 416kB/s write-throughput at 100μA cell current. A charge-transfer direct-sense scheme has a 16b parallel read access time of 9.9ns in an array drawing 280μA. A standby voltage scheme suppresses leakage current in the cell current path and increases the measured PCM cell resistance from 3 to 33MΩ.",
author = "Satoru Hanzawa and Naoki Kitai and Kenichi Osada and Akira Kotabe and Yuichi Matsui and Nozomu Matsuzaki and Norikatsu Takaura and Masahiro Moniwa and Takayuki Kawahara",
year = "2007",
month = sep,
day = "27",
doi = "10.1109/ISSCC.2007.373500",
language = "English",
isbn = "1424408539",
series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",
pages = "474--475+616+471",
booktitle = "2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers",
note = "54th IEEE International Solid-State Circuits Conference, ISSCC 2007 ; Conference date: 11-02-2007 Through 15-02-2007",
}