Abstract
A 512kb MRAM comprising cross-point cells, magnetic tunnel junctions, bit lines and word lines is designed using a 0.25μm CMOS and a 0.6μm MRAM process. The design provides a new sensing method without a large area overhead despite a low current cross-point signal. The MRAM operates with read access time of 1.0μs at 2.5V.
| Original language | English |
|---|---|
| Pages (from-to) | 277-279 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
| Publication status | Published - 2003 Jul 23 |
| Externally published | Yes |
| Event | 2003 Digest of Technical Papers - , United States Duration: 2003 Feb 9 → 2003 Feb 13 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Cite this
Sakimura, N., Sugibayashi, T., Honda, T., Miura, S., Numata, H., Hada, H., & Tahara, S. (2003). A 512kb cross-point cell MRAM. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 277-279.