A 512kb cross-point cell MRAM

Noboru Sakimura, Tadahiko Sugibayashi, Takeshi Honda, Sadahiko Miura, Hideaki Numata, Hiromitsu Hada, Shuichi Tahara

Research output: Contribution to journalConference article

22 Citations (Scopus)


A 512kb MRAM comprising cross-point cells, magnetic tunnel junctions, bit lines and word lines is designed using a 0.25μm CMOS and a 0.6μm MRAM process. The design provides a new sensing method without a large area overhead despite a low current cross-point signal. The MRAM operates with read access time of 1.0μs at 2.5V.

Original languageEnglish
Pages (from-to)277-279
Number of pages3
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication statusPublished - 2003 Jul 23
Externally publishedYes
Event2003 Digest of Technical Papers - , United States
Duration: 2003 Feb 92003 Feb 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Sakimura, N., Sugibayashi, T., Honda, T., Miura, S., Numata, H., Hada, H., & Tahara, S. (2003). A 512kb cross-point cell MRAM. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 277-279.