A 512kb cross-point cell MRAM

Noboru Sakimura; Tadahiko Sugibayashi; Takeshi Honda; Sadahiko Miura; Hideaki Numata; Hiromitsu Hada; Shuichi Tahara

A 512kb cross-point cell MRAM

Noboru Sakimura, Tadahiko Sugibayashi, Takeshi Honda, Sadahiko Miura, Hideaki Numata, Hiromitsu Hada, Shuichi Tahara

Research output: Contribution to journal › Conference article › peer-review

Abstract

A 512kb MRAM comprising cross-point cells, magnetic tunnel junctions, bit lines and word lines is designed using a 0.25μm CMOS and a 0.6μm MRAM process. The design provides a new sensing method without a large area overhead despite a low current cross-point signal. The MRAM operates with read access time of 1.0μs at 2.5V.

Original language	English
Pages (from-to)	277-279
Number of pages	3
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication status	Published - 2003 Jul 23
Externally published	Yes
Event	2003 Digest of Technical Papers - , United States Duration: 2003 Feb 9 → 2003 Feb 13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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abstract = "A 512kb MRAM comprising cross-point cells, magnetic tunnel junctions, bit lines and word lines is designed using a 0.25μm CMOS and a 0.6μm MRAM process. The design provides a new sensing method without a large area overhead despite a low current cross-point signal. The MRAM operates with read access time of 1.0μs at 2.5V.",

author = "Noboru Sakimura and Tadahiko Sugibayashi and Takeshi Honda and Sadahiko Miura and Hideaki Numata and Hiromitsu Hada and Shuichi Tahara",

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journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

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AU - Sakimura, Noboru

AU - Sugibayashi, Tadahiko

AU - Honda, Takeshi

AU - Miura, Sadahiko

AU - Numata, Hideaki

AU - Hada, Hiromitsu

AU - Tahara, Shuichi

PY - 2003/7/23

Y1 - 2003/7/23

N2 - A 512kb MRAM comprising cross-point cells, magnetic tunnel junctions, bit lines and word lines is designed using a 0.25μm CMOS and a 0.6μm MRAM process. The design provides a new sensing method without a large area overhead despite a low current cross-point signal. The MRAM operates with read access time of 1.0μs at 2.5V.

AB - A 512kb MRAM comprising cross-point cells, magnetic tunnel junctions, bit lines and word lines is designed using a 0.25μm CMOS and a 0.6μm MRAM process. The design provides a new sensing method without a large area overhead despite a low current cross-point signal. The MRAM operates with read access time of 1.0μs at 2.5V.

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M3 - Conference article

AN - SCOPUS:0038645310

SP - 277

EP - 279

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SN - 0193-6530

T2 - 2003 Digest of Technical Papers

Y2 - 9 February 2003 through 13 February 2003

ER -

A 512kb cross-point cell MRAM

Abstract

ASJC Scopus subject areas

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