A 50-GHz static frequency divider and 40-Gb/s MUX/DEMUX using self-aligned selective-epitaxial-growth sige HBTs with 8-ps ECL

Katsuyoshi Washio, Eiji Ohue, Katsuya Oda, Reiko Hayami, Masamichi Tanabe, Hiromi Shimamoto

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A static frequency divider with a maximum operating frequency of up to 50 GHz and a multiplexer (MUX) and a demultiplexer (DEMUX) that both operate at 40 Gb/s were developed for future optical-fiber-link systems. These digital circuits were fabricated using ultra-high-speed self-aligned selective-epitaxial-growth SiGe-base heterojunction bipolar transistors (HBTs) with self-aligned stacked metal/in-situ doped poly-Si electrodes. These HBTs provide a 95-GHz cutoff frequency, a 108-GHz maximum oscillation frequency, and a minimum emitter-coupled-logic (ECL) gate delay of 8 ps. The excellent results from this digital chipset show that SiGe HBT technology, with its high reliability and cost-effectiveness, will play an important role in future multi-gigabit per second optical-fiber-link systems.

Original languageEnglish
Pages (from-to)1482-1487
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume48
Issue number7
DOIs
Publication statusPublished - 2001 Jul
Externally publishedYes

Keywords

  • Bipolar transistors
  • Digital integrated circuits
  • Emitter-coupled-logic (ECL)
  • Epitaxial growth
  • Heterojunctions
  • Optical communication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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