Abstract
A static frequency divider with a maximum operating frequency of up to 50 GHz and a multiplexer (MUX) and a demultiplexer (DEMUX) that both operate at 40 Gb/s were developed for future optical-fiber-link systems. These digital circuits were fabricated using ultra-high-speed self-aligned selective-epitaxial-growth SiGe-base heterojunction bipolar transistors (HBTs) with self-aligned stacked metal/in-situ doped poly-Si electrodes. These HBTs provide a 95-GHz cutoff frequency, a 108-GHz maximum oscillation frequency, and a minimum emitter-coupled-logic (ECL) gate delay of 8 ps. The excellent results from this digital chipset show that SiGe HBT technology, with its high reliability and cost-effectiveness, will play an important role in future multi-gigabit per second optical-fiber-link systems.
Original language | English |
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Pages (from-to) | 1482-1487 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 48 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2001 Jul |
Externally published | Yes |
Keywords
- Bipolar transistors
- Digital integrated circuits
- Emitter-coupled-logic (ECL)
- Epitaxial growth
- Heterojunctions
- Optical communication
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering