A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band

Toru Masuda, Nobuhiro Shiramizu, Takahiro Nakamura, Katsuyoshi Washio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

An image-rejection low-noise amplifier (LNA) based on 0.18-μm SiGe BiCMOS technology was developed in order to create a 24GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a 14-dB gain at an operating frequency of 27.2 GHz and an IRR greater than 50 dB IRR at an image frequency of 21.6 GHz. While its IIP3 is -14 dBm, its power consumption with a 1.2-V power supply is also low, 7.9 mW.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
Pages307-310
Number of pages4
DOIs
Publication statusPublished - 2009 Oct 27
Externally publishedYes
Event2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009 - Boston, MA, United States
Duration: 2009 Jun 72009 Jun 9

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Other

Other2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
CountryUnited States
CityBoston, MA
Period09/6/709/6/9

Keywords

  • Image rejection
  • Low noise amplifier
  • Notch filter
  • SiGe HBT

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Masuda, T., Shiramizu, N., Nakamura, T., & Washio, K. (2009). A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band. In Proceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009 (pp. 307-310). [5135546] (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). https://doi.org/10.1109/RFIC.2009.5135546