A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band

Toru Masuda; Nobuhiro Shiramizu; Takahiro Nakamura; Katsuyoshi Washio

doi:10.1109/RFIC.2009.5135546

A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band

Toru Masuda, Nobuhiro Shiramizu, Takahiro Nakamura, Katsuyoshi Washio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

An image-rejection low-noise amplifier (LNA) based on 0.18-μm SiGe BiCMOS technology was developed in order to create a 24GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a 14-dB gain at an operating frequency of 27.2 GHz and an IRR greater than 50 dB IRR at an image frequency of 21.6 GHz. While its IIP3 is -14 dBm, its power consumption with a 1.2-V power supply is also low, 7.9 mW.

Original language	English
Title of host publication	Proceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
Pages	307-310
Number of pages	4
DOIs	https://doi.org/10.1109/RFIC.2009.5135546
Publication status	Published - 2009
Externally published	Yes
Event	2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009 - Boston, MA, United States Duration: 2009 Jun 7 → 2009 Jun 9

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)	1529-2517

Other

Other	2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
Country/Territory	United States
City	Boston, MA
Period	09/6/7 → 09/6/9

Keywords

Image rejection
Low noise amplifier
Notch filter
SiGe HBT

ASJC Scopus subject areas

Engineering(all)

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10.1109/RFIC.2009.5135546

Cite this

A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band. / Masuda, Toru; Shiramizu, Nobuhiro; Nakamura, Takahiro et al.

Proceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009. 2009. p. 307-310 5135546 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Masuda, T, Shiramizu, N, Nakamura, T & Washio, K 2009, A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band. in Proceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009., 5135546, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, pp. 307-310, 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009, Boston, MA, United States, 09/6/7. https://doi.org/10.1109/RFIC.2009.5135546

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abstract = "An image-rejection low-noise amplifier (LNA) based on 0.18-μm SiGe BiCMOS technology was developed in order to create a 24GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a 14-dB gain at an operating frequency of 27.2 GHz and an IRR greater than 50 dB IRR at an image frequency of 21.6 GHz. While its IIP3 is -14 dBm, its power consumption with a 1.2-V power supply is also low, 7.9 mW.",

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AB - An image-rejection low-noise amplifier (LNA) based on 0.18-μm SiGe BiCMOS technology was developed in order to create a 24GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a 14-dB gain at an operating frequency of 27.2 GHz and an IRR greater than 50 dB IRR at an image frequency of 21.6 GHz. While its IIP3 is -14 dBm, its power consumption with a 1.2-V power supply is also low, 7.9 mW.

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A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band

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Keywords

ASJC Scopus subject areas

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