Abstract
A. novel one-transistor-type MOS RAM is discussed. This memory cell gives a remarkable area reduction and/or increase in storage capacitance by stacking the main portion of the storage capacitor on the address transistor, bit lines, or field oxides. It is called astacked-capacitor (STC) RAM. This STC memory has a three-level poly-Si structure. The stacked capacitor has poly-Si-Si3N4-poly-Si (or Al) structure. A 16-kbit STC RAM has been fabricated with 3-jum technology and operated successfully. Memory performance is strikingly improved by using STC cells.
Original language | English |
---|---|
Pages (from-to) | 661-666 |
Number of pages | 6 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 15 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1980 Aug |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering