A 400 μm thick diamond-like carbon (DLC) film was prepared on an aluminum alloy (A5052) substrate by a hybrid process of plasma-based ion implantation and deposition using toluene as a precursor gas. The plasma-based ion implantation during deposition relaxed the residual stress in DLC film to almost 0, indicating the production of stress-free DLC. The carbon ion implantation from the methane and acetylene plasmas to the substrate surface, prior to deposition, resulted in an interface graded in carbon composition as well as the formation of amorphous-like structure at the carbon ion-implanted layer that should work as a buffer for stress-relaxation. As a result, a supra-thick DLC film more than 400 μm in thickness was prepared on the substrate.
- Residual stress
- Supra-thick DLC
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering