A 400 μm thickness diamond-like carbon preparation

Y. Oka, M. Yatsuzuka, M. Nishijima, K. Hiraga

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    A 400 μm thick diamond-like carbon (DLC) film was prepared on an aluminum alloy (A5052) substrate by a hybrid process of plasma-based ion implantation and deposition using toluene as a precursor gas. The plasma-based ion implantation during deposition relaxed the residual stress in DLC film to almost 0, indicating the production of stress-free DLC. The carbon ion implantation from the methane and acetylene plasmas to the substrate surface, prior to deposition, resulted in an interface graded in carbon composition as well as the formation of amorphous-like structure at the carbon ion-implanted layer that should work as a buffer for stress-relaxation. As a result, a supra-thick DLC film more than 400 μm in thickness was prepared on the substrate.

    Original languageEnglish
    Pages (from-to)405-408
    Number of pages4
    JournalDiamond and Related Materials
    Volume17
    Issue number3
    DOIs
    Publication statusPublished - 2008 Mar

    Keywords

    • Adhesion
    • DLC
    • PBIID
    • Residual stress
    • Supra-thick DLC

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Chemistry(all)
    • Mechanical Engineering
    • Materials Chemistry
    • Electrical and Electronic Engineering

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