TY - JOUR
T1 - A 4 V operation, flexible braille display using organic transistors, carbon nanotube actuators, and organic static random-access memory
AU - Fukuda, Kenjiro
AU - Sekitani, Tsuyoshi
AU - Zschieschang, Ute
AU - Klauk, Hagen
AU - Kuribara, Kazunori
AU - Yokota, Tomoyuki
AU - Sugino, Takushi
AU - Asaka, Kinji
AU - Ikeda, Masaaki
AU - Kuwabara, Hirokazu
AU - Yamamoto, Tatsuya
AU - Takimiya, Kazuo
AU - Fukushima, Takanori
AU - Aida, Takuzo
AU - Takamiya, Makoto
AU - Sakurai, Takayasu
AU - Someya, Takao
PY - 2011/11/8
Y1 - 2011/11/8
N2 - A sheet-type Braille display operating at 4 V has been successfully fabricated by integrating organic an static random-access memory (SRAM) array with carbon nanotube (CNT)-based actuators that are driven by organic thin-film transistors (control-TFTs). The on current of organic control-TFTs that drive CNT actuators exceeds 3 mA, the mobility exceeds 1cm2 V -1s-1 , and the on/off ratio exceeds 105 at an operational voltage of 3 V. By adjusting the process time for the formation of the aluminum oxide dielectrics, the threshold voltage of the organic TFTs can be systematically controlled. This technique leads to an improved static noise margin of the SRAM and enables its stable operation with a short programming time of 2 ms at a programming voltage of 2 V. As a demonstration of the operation of one actuator with one control-TFT and SRAM: the displacement of actuator exceeds 300μm at an operation voltage of 4 V, which is large enough for a blind person to recognize the pop-up of braille dots. Integrating the SRAM array reduces the frame rate of a 12 dot × 12 dot display from 1/21.6 s to 1/2.9 s.
AB - A sheet-type Braille display operating at 4 V has been successfully fabricated by integrating organic an static random-access memory (SRAM) array with carbon nanotube (CNT)-based actuators that are driven by organic thin-film transistors (control-TFTs). The on current of organic control-TFTs that drive CNT actuators exceeds 3 mA, the mobility exceeds 1cm2 V -1s-1 , and the on/off ratio exceeds 105 at an operational voltage of 3 V. By adjusting the process time for the formation of the aluminum oxide dielectrics, the threshold voltage of the organic TFTs can be systematically controlled. This technique leads to an improved static noise margin of the SRAM and enables its stable operation with a short programming time of 2 ms at a programming voltage of 2 V. As a demonstration of the operation of one actuator with one control-TFT and SRAM: the displacement of actuator exceeds 300μm at an operation voltage of 4 V, which is large enough for a blind person to recognize the pop-up of braille dots. Integrating the SRAM array reduces the frame rate of a 12 dot × 12 dot display from 1/21.6 s to 1/2.9 s.
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U2 - 10.1002/adfm.201101050
DO - 10.1002/adfm.201101050
M3 - Article
AN - SCOPUS:82955217301
VL - 21
SP - 4019
EP - 4027
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 21
ER -