A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-μm SiGe BiCMOS technology

Nobuhiro Shiramizu, Toru Masuda, Masamichi Tanabe, Katsuyoshi Washio

Research output: Contribution to journalConference articlepeer-review

42 Citations (Scopus)

Abstract

We have developed a SiGe HBT low-noise amplifier (LNA) for ultra-wideband (UWB) systems. We reduced the noise figure (NF) over the frequency range from 3.1 to 10.6 GHz (the FCC-specified UWB range) by using a novel LNA structure with an inductor-terminated, common-base input stage in front of a resistive-feedback amplifier. The circuit topology simultaneously enables increased gain for the input stage and wideband noise matching. On-chip measurement using microwave probes has shown that the LNA - fabricated using commercially available 0.25-μm SOI SiGe BiCMOS technology provides a wide 3-dB bandwidth of 14.5 GHz, an S21 of 22 dB, and a low noise figure ranging from 2.7 dB to 3.9 dB, along with low power consumption of 13.2 mW. Deviation of the S21 group delay is kept within 25 ps to ensure faithful signal amplification. The LNA occupies a chip area of 0.49 mm2.

Original languageEnglish
Article numberRMO1B-3
Pages (from-to)39-42
Number of pages4
JournalDigest of papers - IEEE Radio Frequency Integrated Circuits Symposium
Publication statusPublished - 2005 Nov 15
Externally publishedYes
Event2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States
Duration: 2005 Jun 122005 Jun 14

Keywords

  • Low noise amplifier
  • SiGe HBT
  • Ultra-wideband

ASJC Scopus subject areas

  • Engineering(all)

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