A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-μm SiGe BiCMOS technology

Nobuhiro Shiramizu; Toru Masuda; Masamichi Tanabe; Katsuyoshi Washio

A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-μm SiGe BiCMOS technology

Nobuhiro Shiramizu, Toru Masuda, Masamichi Tanabe, Katsuyoshi Washio

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have developed a SiGe HBT low-noise amplifier (LNA) for ultra-wideband (UWB) systems. We reduced the noise figure (NF) over the frequency range from 3.1 to 10.6 GHz (the FCC-specified UWB range) by using a novel LNA structure with an inductor-terminated, common-base input stage in front of a resistive-feedback amplifier. The circuit topology simultaneously enables increased gain for the input stage and wideband noise matching. On-chip measurement using microwave probes has shown that the LNA - fabricated using commercially available 0.25-μm SOI SiGe BiCMOS technology provides a wide 3-dB bandwidth of 14.5 GHz, an S21 of 22 dB, and a low noise figure ranging from 2.7 dB to 3.9 dB, along with low power consumption of 13.2 mW. Deviation of the S21 group delay is kept within 25 ps to ensure faithful signal amplification. The LNA occupies a chip area of 0.49 mm².

Original language	English
Article number	RMO1B-3
Pages (from-to)	39-42
Number of pages	4
Journal	Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
Publication status	Published - 2005 Nov 15
Externally published	Yes
Event	2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States Duration: 2005 Jun 12 → 2005 Jun 14

Keywords

Low noise amplifier
SiGe HBT
Ultra-wideband

ASJC Scopus subject areas

Engineering(all)

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A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-μm SiGe BiCMOS technology. / Shiramizu, Nobuhiro; Masuda, Toru; Tanabe, Masamichi; Washio, Katsuyoshi.

In: Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium, 15.11.2005, p. 39-42.

Research output: Contribution to journal › Conference article › peer-review

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title = "A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-μm SiGe BiCMOS technology",

abstract = "We have developed a SiGe HBT low-noise amplifier (LNA) for ultra-wideband (UWB) systems. We reduced the noise figure (NF) over the frequency range from 3.1 to 10.6 GHz (the FCC-specified UWB range) by using a novel LNA structure with an inductor-terminated, common-base input stage in front of a resistive-feedback amplifier. The circuit topology simultaneously enables increased gain for the input stage and wideband noise matching. On-chip measurement using microwave probes has shown that the LNA - fabricated using commercially available 0.25-μm SOI SiGe BiCMOS technology provides a wide 3-dB bandwidth of 14.5 GHz, an S21 of 22 dB, and a low noise figure ranging from 2.7 dB to 3.9 dB, along with low power consumption of 13.2 mW. Deviation of the S21 group delay is kept within 25 ps to ensure faithful signal amplification. The LNA occupies a chip area of 0.49 mm2.",

keywords = "Low noise amplifier, SiGe HBT, Ultra-wideband",

author = "Nobuhiro Shiramizu and Toru Masuda and Masamichi Tanabe and Katsuyoshi Washio",

year = "2005",

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journal = "IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers",

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AU - Shiramizu, Nobuhiro

AU - Masuda, Toru

AU - Tanabe, Masamichi

AU - Washio, Katsuyoshi

PY - 2005/11/15

Y1 - 2005/11/15

N2 - We have developed a SiGe HBT low-noise amplifier (LNA) for ultra-wideband (UWB) systems. We reduced the noise figure (NF) over the frequency range from 3.1 to 10.6 GHz (the FCC-specified UWB range) by using a novel LNA structure with an inductor-terminated, common-base input stage in front of a resistive-feedback amplifier. The circuit topology simultaneously enables increased gain for the input stage and wideband noise matching. On-chip measurement using microwave probes has shown that the LNA - fabricated using commercially available 0.25-μm SOI SiGe BiCMOS technology provides a wide 3-dB bandwidth of 14.5 GHz, an S21 of 22 dB, and a low noise figure ranging from 2.7 dB to 3.9 dB, along with low power consumption of 13.2 mW. Deviation of the S21 group delay is kept within 25 ps to ensure faithful signal amplification. The LNA occupies a chip area of 0.49 mm2.

AB - We have developed a SiGe HBT low-noise amplifier (LNA) for ultra-wideband (UWB) systems. We reduced the noise figure (NF) over the frequency range from 3.1 to 10.6 GHz (the FCC-specified UWB range) by using a novel LNA structure with an inductor-terminated, common-base input stage in front of a resistive-feedback amplifier. The circuit topology simultaneously enables increased gain for the input stage and wideband noise matching. On-chip measurement using microwave probes has shown that the LNA - fabricated using commercially available 0.25-μm SOI SiGe BiCMOS technology provides a wide 3-dB bandwidth of 14.5 GHz, an S21 of 22 dB, and a low noise figure ranging from 2.7 dB to 3.9 dB, along with low power consumption of 13.2 mW. Deviation of the S21 group delay is kept within 25 ps to ensure faithful signal amplification. The LNA occupies a chip area of 0.49 mm2.

KW - Low noise amplifier

KW - SiGe HBT

KW - Ultra-wideband

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JO - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

JF - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

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M1 - RMO1B-3

T2 - 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers

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ER -

A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-μm SiGe BiCMOS technology

Abstract

Keywords

ASJC Scopus subject areas

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