TY - JOUR
T1 - A 2.8 μm pixel-pitch 55- ke full-well capacity global-shutter complementary metal oxide semiconductor image sensor using lateral overflow integration capacitor
AU - Sakai, Shin
AU - Tashiro, Yoshiaki
AU - Kuroda, Rihito
AU - Sugawa, Shigetoshi
PY - 2013/4/1
Y1 - 2013/4/1
N2 - In this paper, a global-shutter complementary metal oxide semiconductor (CMOS) image sensor using lateral overflow integration capacitor (LOFIC) in each pixel without trade-offs between full-well capacity (FWC) and dark current and between FWC and pixel size has been demonstrated. Because the FWC is determined only by LOFIC, a photodiode (PD) and storage diffusion capacitor (SD) are designed focusing on achieving low dark current performance especially. A 2.8 m pixel pitch Bayer-RGB color CMOS image sensor with the pinned diffusion capacitor for the storage node was fabricated and achieved both 83.3 e/s at the PD and 58.3 e/s at the SD dark current at 60 C and about 55 ke full well capacity. A high resolution performance, a high FWC performance and a low dark current performance were simultaneously achieved in this image sensor.
AB - In this paper, a global-shutter complementary metal oxide semiconductor (CMOS) image sensor using lateral overflow integration capacitor (LOFIC) in each pixel without trade-offs between full-well capacity (FWC) and dark current and between FWC and pixel size has been demonstrated. Because the FWC is determined only by LOFIC, a photodiode (PD) and storage diffusion capacitor (SD) are designed focusing on achieving low dark current performance especially. A 2.8 m pixel pitch Bayer-RGB color CMOS image sensor with the pinned diffusion capacitor for the storage node was fabricated and achieved both 83.3 e/s at the PD and 58.3 e/s at the SD dark current at 60 C and about 55 ke full well capacity. A high resolution performance, a high FWC performance and a low dark current performance were simultaneously achieved in this image sensor.
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U2 - 10.7567/JJAP.52.04CE01
DO - 10.7567/JJAP.52.04CE01
M3 - Article
AN - SCOPUS:84880839142
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04CE01
ER -