A 24.3Me                         -                          Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging

M. Murata; R. Kuroda; Y. Fujihara; Y. Aoyagi; H. Shibata; T. Shibaguchi; Y. Kamata; N. Miura; N. Kuriyama; S. Sugawa

doi:10.1109/IEDM.2018.8614590

A 24.3Me ^- Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging

M. Murata, R. Kuroda, Y. Fujihara, Y. Aoyagi, H. Shibata, T. Shibaguchi, Y. Kamata, N. Miura, N. Kuriyama, S. Sugawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper presents a 16μm pixel pitch CMOS image sensor exhibiting 24.3Me-full well capacity with a record spatial efficiency of 95 ke-μm2 and high quantum efficiency in near infrared waveband by the introduction of lateral overflow integration trench capacitor on a∼ 10 12 cm -3 p-type Si substrate. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71 dB SNR absorption imaging at 1050nm.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	10.3.1-10.3.4
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614590
Publication status	Published - 2019 Jan 16
Externally published	Yes
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: 2018 Dec 1 → 2018 Dec 5

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2018-December
ISSN (Print)	0163-1918

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	18/12/1 → 18/12/5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2018.8614590

Cite this

Murata, M., Kuroda, R., Fujihara, Y., Aoyagi, Y., Shibata, H., Shibaguchi, T., Kamata, Y., Miura, N., Kuriyama, N., & Sugawa, S. (2019). A 24.3Me ^- Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 10.3.1-10.3.4). [8614590] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614590

A 24.3Me ^- Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging . / Murata, M.; Kuroda, R.; Fujihara, Y.; Aoyagi, Y.; Shibata, H.; Shibaguchi, T.; Kamata, Y.; Miura, N.; Kuriyama, N.; Sugawa, S.

2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 10.3.1-10.3.4 8614590 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Murata, M, Kuroda, R, Fujihara, Y, Aoyagi, Y, Shibata, H, Shibaguchi, T, Kamata, Y, Miura, N, Kuriyama, N & Sugawa, S 2019, A 24.3Me ^- Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614590, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 10.3.1-10.3.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 18/12/1. https://doi.org/10.1109/IEDM.2018.8614590

Murata M, Kuroda R, Fujihara Y, Aoyagi Y, Shibata H, Shibaguchi T et al. A 24.3Me ^- Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging In 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 10.3.1-10.3.4. 8614590. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2018.8614590

Murata, M. ; Kuroda, R. ; Fujihara, Y. ; Aoyagi, Y. ; Shibata, H. ; Shibaguchi, T. ; Kamata, Y. ; Miura, N. ; Kuriyama, N. ; Sugawa, S. / A 24.3Me ^- Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 10.3.1-10.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = " A 24.3Me - Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging ",

abstract = "This paper presents a 16μm pixel pitch CMOS image sensor exhibiting 24.3Me-full well capacity with a record spatial efficiency of 95 ke-μm2 and high quantum efficiency in near infrared waveband by the introduction of lateral overflow integration trench capacitor on a∼ 10 12 cm -3 p-type Si substrate. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71 dB SNR absorption imaging at 1050nm.",

author = "M. Murata and R. Kuroda and Y. Fujihara and Y. Aoyagi and H. Shibata and T. Shibaguchi and Y. Kamata and N. Miura and N. Kuriyama and S. Sugawa",

note = "Funding Information: Table 1 shows the performance summary of the developed CIS. Fig.15 shows the relationship of FWC per unit area and DR with other linear response CIS. A record spatial efficiency of 95ke-/μm2 with 130dB DR was successfully achieved. IV. CONCLUSIONS A 16μm pixel pitch CIS with LOFITreC fabricated on ~1012cm-3 p-type Si substrate was presented. The developed CIS achieved a linear response 24.3Me- FWC with a record spatial efficiency of 95ke-/μm2 and very high QE in NIR waveband. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71dB SNR absorption imaging at 1050nm. The developed CIS is promissing for sensing applications in medical and healthcare fields and more in the IoT era. ACKNOWLEDGMENT This work was partly supported by JSPS KAKENHI Grant Number 17H04921. Publisher Copyright: {\textcopyright} 2018 IEEE.; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

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doi = "10.1109/IEDM.2018.8614590",

language = "English",

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AU - Aoyagi, Y.

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AU - Miura, N.

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AU - Sugawa, S.

N1 - Funding Information: Table 1 shows the performance summary of the developed CIS. Fig.15 shows the relationship of FWC per unit area and DR with other linear response CIS. A record spatial efficiency of 95ke-/μm2 with 130dB DR was successfully achieved. IV. CONCLUSIONS A 16μm pixel pitch CIS with LOFITreC fabricated on ~1012cm-3 p-type Si substrate was presented. The developed CIS achieved a linear response 24.3Me- FWC with a record spatial efficiency of 95ke-/μm2 and very high QE in NIR waveband. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71dB SNR absorption imaging at 1050nm. The developed CIS is promissing for sensing applications in medical and healthcare fields and more in the IoT era. ACKNOWLEDGMENT This work was partly supported by JSPS KAKENHI Grant Number 17H04921. Publisher Copyright: © 2018 IEEE.

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