TY - GEN
T1 - A 24.3Me - Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging
AU - Murata, M.
AU - Kuroda, R.
AU - Fujihara, Y.
AU - Aoyagi, Y.
AU - Shibata, H.
AU - Shibaguchi, T.
AU - Kamata, Y.
AU - Miura, N.
AU - Kuriyama, N.
AU - Sugawa, S.
N1 - Funding Information:
Table 1 shows the performance summary of the developed CIS. Fig.15 shows the relationship of FWC per unit area and DR with other linear response CIS. A record spatial efficiency of 95ke-/μm2 with 130dB DR was successfully achieved. IV. CONCLUSIONS A 16μm pixel pitch CIS with LOFITreC fabricated on ~1012cm-3 p-type Si substrate was presented. The developed CIS achieved a linear response 24.3Me- FWC with a record spatial efficiency of 95ke-/μm2 and very high QE in NIR waveband. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71dB SNR absorption imaging at 1050nm. The developed CIS is promissing for sensing applications in medical and healthcare fields and more in the IoT era. ACKNOWLEDGMENT This work was partly supported by JSPS KAKENHI Grant Number 17H04921.
Publisher Copyright:
© 2018 IEEE.
PY - 2019/1/16
Y1 - 2019/1/16
N2 - This paper presents a 16μm pixel pitch CMOS image sensor exhibiting 24.3Me-full well capacity with a record spatial efficiency of 95 ke-μm2 and high quantum efficiency in near infrared waveband by the introduction of lateral overflow integration trench capacitor on a∼ 10 12 cm -3 p-type Si substrate. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71 dB SNR absorption imaging at 1050nm.
AB - This paper presents a 16μm pixel pitch CMOS image sensor exhibiting 24.3Me-full well capacity with a record spatial efficiency of 95 ke-μm2 and high quantum efficiency in near infrared waveband by the introduction of lateral overflow integration trench capacitor on a∼ 10 12 cm -3 p-type Si substrate. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71 dB SNR absorption imaging at 1050nm.
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U2 - 10.1109/IEDM.2018.8614590
DO - 10.1109/IEDM.2018.8614590
M3 - Conference contribution
AN - SCOPUS:85061830162
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 10.3.1-10.3.4
BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Y2 - 1 December 2018 through 5 December 2018
ER -