A 24.3Me - Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging

M. Murata, R. Kuroda, Y. Fujihara, Y. Aoyagi, H. Shibata, T. Shibaguchi, Y. Kamata, N. Miura, N. Kuriyama, S. Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a 16μm pixel pitch CMOS image sensor exhibiting 24.3Me-full well capacity with a record spatial efficiency of 95 ke-μm2 and high quantum efficiency in near infrared waveband by the introduction of lateral overflow integration trench capacitor on a∼ 10 12 cm -3 p-type Si substrate. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71 dB SNR absorption imaging at 1050nm.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages10.3.1-10.3.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 2019 Jan 16
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 2018 Dec 12018 Dec 5

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period18/12/118/12/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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