A 24-GHz SiGe-HBT driver amplifier with 40-dB image-rejection

Toru Masuda, Nobuhiro Shiramizu, Takahiro Nakamura, Katsuyoshi Washio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A driver amplifier with a high image-rejection function was developed in 0.18-μm SiGe BiCMOS technology to create a 24-GHz band RF transmitter. The proposed configuration for the driver amplifier uses a notch feedback circuit and a common-emitter amplifier stage and is considered to have a high image-rejection ratio (IRR) and high power-handling capability in the quasi-millimeter-wave frequency region. The driver amplifier obtained a 6.9-dB gain at an operating frequency of 23 GHz and a 40-dB IRR at an image frequency of 16 GHz. Moreover, good largesignal characteristics such as an OP1dB of +0.3 dBm and an OIP3 of +14.5 dBm were achieved simultaneously, while the power consumption was a low 7.2 mW with a 1.5-V power supply.

Original languageEnglish
Title of host publicationAPMC 2009 - Asia Pacific Microwave Conference 2009
Pages361-364
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes
EventAsia Pacific Microwave Conference 2009, APMC 2009 - Singapore, Singapore
Duration: 2009 Dec 72009 Dec 10

Publication series

NameAPMC 2009 - Asia Pacific Microwave Conference 2009

Other

OtherAsia Pacific Microwave Conference 2009, APMC 2009
CountrySingapore
CitySingapore
Period09/12/709/12/10

Keywords

  • Driver amplifier
  • Image-rejection
  • Notch filter
  • SiGe HBT

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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