A 2.3 μm2 memory cell structure for 16 Mb NAND EEPROMs

R. Shirota, R. Nakayama, R. Kirisawa, M. Momodomi, K. Sakui, Y. Itoh, S. Aritome, T. Endoh, F. Hatori, F. Masuoka

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

A NAND structure memory cell with 2.2 × 1.05 μm2 size per bit, based on a 0.6 μm design rule, has been developed for 16 Mb flash EEPROMs. The cell size is about 64% of the smallest 16 Mb EPROM cell so far reported. An extremely small cell can be realized by the following technologies: (1) newly developed 0.3 μm space self-aligned stacked gate patterning, (2) a NAND structured cell array which contains 16 memory transistors in series, and (3) high-voltage field isolation technology used to isolate neighboring bits. The first and second technologies reduce the length of the cell by 67.6% compared with the conventional NAND structured cell using the same design rule, while the third technology reduces the width by 84.6%.

Original languageEnglish
Pages (from-to)103-106
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1990 Dec 1
Externally publishedYes
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1990 Dec 91990 Dec 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Shirota, R., Nakayama, R., Kirisawa, R., Momodomi, M., Sakui, K., Itoh, Y., Aritome, S., Endoh, T., Hatori, F., & Masuoka, F. (1990). A 2.3 μm2 memory cell structure for 16 Mb NAND EEPROMs. Technical Digest - International Electron Devices Meeting, 103-106.