TY - GEN
T1 - A 200dB dynamic range iris-less CMOS image sensor with lateral overflow integration capacitor using hybrid voltage and current readout operation
AU - Akahane, Nana
AU - Ryuzaki, Rie
AU - Adachi, Satoru
AU - Mizobuchi, Koichi
AU - Sugawa, Shigetoshi
PY - 2006/12/1
Y1 - 2006/12/1
N2 - A 2.6×2.6mm2 image sensor fabricated in 0.35μm 2P3M CMOS contains 64×64 pixels with 20×20pnf pixel size and has an extended dynamic range of over 200dB. This DR is equivalent to the incident light ranging from about 10-2 to 108 Ix with the lens iris fixed.
AB - A 2.6×2.6mm2 image sensor fabricated in 0.35μm 2P3M CMOS contains 64×64 pixels with 20×20pnf pixel size and has an extended dynamic range of over 200dB. This DR is equivalent to the incident light ranging from about 10-2 to 108 Ix with the lens iris fixed.
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M3 - Conference contribution
AN - SCOPUS:34248549941
SN - 1424400791
SN - 9781424400799
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
BT - 2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers
T2 - 2006 IEEE International Solid-State Circuits Conference, ISSCC
Y2 - 6 February 2006 through 9 February 2006
ER -