A 200dB dynamic range iris-less CMOS image sensor with lateral overflow integration capacitor using hybrid voltage and current readout operation

Nana Akahane; Rie Ryuzaki; Satoru Adachi; Koichi Mizobuchi; Shigetoshi Sugawa

A 200dB dynamic range iris-less CMOS image sensor with lateral overflow integration capacitor using hybrid voltage and current readout operation

Nana Akahane, Rie Ryuzaki, Satoru Adachi, Koichi Mizobuchi, Shigetoshi Sugawa

ENG - Management Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

34 Citations (Scopus)

Abstract

A 2.6×2.6mm² image sensor fabricated in 0.35μm 2P3M CMOS contains 64×64 pixels with 20×20pnf pixel size and has an extended dynamic range of over 200dB. This DR is equivalent to the incident light ranging from about 10^-2 to 10⁸ Ix with the lens iris fixed.

Original language	English
Title of host publication	2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers
Publication status	Published - 2006 Dec 1
Event	2006 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States Duration: 2006 Feb 6 → 2006 Feb 9

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)	0193-6530

Other

Other	2006 IEEE International Solid-State Circuits Conference, ISSCC
Country	United States
City	San Francisco, CA
Period	06/2/6 → 06/2/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Akahane, N., Ryuzaki, R., Adachi, S., Mizobuchi, K., & Sugawa, S. (2006). A 200dB dynamic range iris-less CMOS image sensor with lateral overflow integration capacitor using hybrid voltage and current readout operation. In 2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers [1696161] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

A 200dB dynamic range iris-less CMOS image sensor with lateral overflow integration capacitor using hybrid voltage and current readout operation. / Akahane, Nana; Ryuzaki, Rie; Adachi, Satoru; Mizobuchi, Koichi; Sugawa, Shigetoshi.

2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers. 2006. 1696161 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Akahane, N, Ryuzaki, R, Adachi, S, Mizobuchi, K & Sugawa, S 2006, A 200dB dynamic range iris-less CMOS image sensor with lateral overflow integration capacitor using hybrid voltage and current readout operation. in 2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers., 1696161, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2006 IEEE International Solid-State Circuits Conference, ISSCC, San Francisco, CA, United States, 06/2/6.

Akahane N, Ryuzaki R, Adachi S, Mizobuchi K, Sugawa S. A 200dB dynamic range iris-less CMOS image sensor with lateral overflow integration capacitor using hybrid voltage and current readout operation. In 2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers. 2006. 1696161. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

Akahane, Nana ; Ryuzaki, Rie ; Adachi, Satoru ; Mizobuchi, Koichi ; Sugawa, Shigetoshi. / A 200dB dynamic range iris-less CMOS image sensor with lateral overflow integration capacitor using hybrid voltage and current readout operation. 2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers. 2006. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

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