A 200dB dynamic range iris-less CMOS image sensor with lateral overflow integration capacitor using hybrid voltage and current readout operation

Nana Akahane, Rie Ryuzaki, Satoru Adachi, Koichi Mizobuchi, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

35 Citations (Scopus)

Abstract

A 2.6×2.6mm2 image sensor fabricated in 0.35μm 2P3M CMOS contains 64×64 pixels with 20×20pnf pixel size and has an extended dynamic range of over 200dB. This DR is equivalent to the incident light ranging from about 10-2 to 108 Ix with the lens iris fixed.

Original languageEnglish
Title of host publication2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers
Publication statusPublished - 2006 Dec 1
Event2006 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States
Duration: 2006 Feb 62006 Feb 9

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)0193-6530

Other

Other2006 IEEE International Solid-State Circuits Conference, ISSCC
Country/TerritoryUnited States
CitySan Francisco, CA
Period06/2/606/2/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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