TY - GEN
T1 - A 2.0 GHz CMOS triple cascode push-pull power amplifier with second harmonic injection for linearity enhancement
AU - Terajima, Kazuma
AU - Fujii, Kenichi
AU - Sonoda, Takuji
AU - Takagi, Tadashi
AU - Nakayama, Eita
AU - Kameda, Suguru
AU - Suematsu, Noriharu
AU - Tsubouchi, Kazuo
PY - 2014/12/23
Y1 - 2014/12/23
N2 - A novel linearization technique to a CMOS push-pull power amplifier (PA) by second harmonic injection has been proposed. In order to inject second harmonics to the PAs, a new balun with a branching filter has been proposed and fabricated by using multi-layered organic substrates. The PA was fabricated in 0.18-μm CMOS process and was implemented on the balun by flip-chip connection. Because of the low breakdown voltage of CMOS power transistors, triple cascode configuration was adapted. The proposed push-pull PA has delivered an output power of 28.6 dBm with a power-added efficiency (PAE) of 42.2 % at 2.0 GHz and 5.4 V supply voltage. It has been also demonstrated that using second harmonic injection from input port of the PA, PAE and output power with a wideband code division multiple access (WCDMA) modulated signal are improved by 5 % and 2.0 dB respectively at adjacent channel leakage power ratio (ACLR) of-39 dBc.
AB - A novel linearization technique to a CMOS push-pull power amplifier (PA) by second harmonic injection has been proposed. In order to inject second harmonics to the PAs, a new balun with a branching filter has been proposed and fabricated by using multi-layered organic substrates. The PA was fabricated in 0.18-μm CMOS process and was implemented on the balun by flip-chip connection. Because of the low breakdown voltage of CMOS power transistors, triple cascode configuration was adapted. The proposed push-pull PA has delivered an output power of 28.6 dBm with a power-added efficiency (PAE) of 42.2 % at 2.0 GHz and 5.4 V supply voltage. It has been also demonstrated that using second harmonic injection from input port of the PA, PAE and output power with a wideband code division multiple access (WCDMA) modulated signal are improved by 5 % and 2.0 dB respectively at adjacent channel leakage power ratio (ACLR) of-39 dBc.
KW - CMOS power amplifiers (PA)
KW - adjacent channel leakage power ratio (ACLR)
KW - balun
KW - harmonic injection
KW - linearity
KW - planar balun
KW - wideband code division multiple access (WCDMA)
UR - http://www.scopus.com/inward/record.url?scp=84921263885&partnerID=8YFLogxK
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U2 - 10.1109/EuMIC.2014.6997857
DO - 10.1109/EuMIC.2014.6997857
M3 - Conference contribution
AN - SCOPUS:84921263885
T3 - European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
SP - 321
EP - 324
BT - European Microwave Week 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
Y2 - 6 October 2014 through 7 October 2014
ER -