A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology

Guoqiang Zhang; Awinash Anand; Kei Kamada; Siti Amalina; Haruichi Kanaya; Ramesh K. Pokharel; Kousuke Hikichi; Shuji Tanaka; Masayoshi Esashi; Ken Ya Hashimoto; Shinji Taniguchi

doi:10.1109/EuMIC.2014.6997840

A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology

Guoqiang Zhang, Awinash Anand, Kei Kamada, Siti Amalina, Haruichi Kanaya, Ramesh K. Pokharel, Kousuke Hikichi, Shuji Tanaka, Masayoshi Esashi, Ken Ya Hashimoto, Shinji Taniguchi

ENG - Robotics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A 1.9 GHz film bulk acoustic resonator (FBAR) based complementary cross-coupled voltage-controlled oscillator (VCO) designed in 0.18 μm CMOS is presented. DC latch and low frequency instability problems have been solved by the cross-coupled pairs with DC block capacitors. The open loop gain has been analyzed and optimized by considering the effect of transistors' size on enhancement of the stability at low frequencies and the loop gain at the desired oscillation frequency. The optimization of the phase noise has been done by considering the effect of PMOS transistors' size on the quality (Q-) factor and the impedance of FBAR. The final fabricated chip is packaged in dual in-line package (DIP) and the measured performance shows that the proposed FBAR-VCO achieves a phase noise of-148 dBc/Hz at 1 MHz offset with a figure of merit (FOM) of-212 dBc/Hz.

Original language	English
Title of host publication	European Microwave Week 2014
Subtitle of host publication	"Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	253-256
Number of pages	4
ISBN (Electronic)	9782874870361
DOIs	https://doi.org/10.1109/EuMIC.2014.6997840
Publication status	Published - 2014 Jan 1
Event	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome Duration: 2014 Oct 6 → 2014 Oct 7

Other

Other	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
City	Rome
Period	14/10/6 → 14/10/7

Keywords

DC latch
FBAR-VCO
open loop gain
parasitic oscillation
phase noise

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EuMIC.2014.6997840

Cite this

Zhang, G., Anand, A., Kamada, K., Amalina, S., Kanaya, H., Pokharel, R. K., Hikichi, K., Tanaka, S., Esashi, M., Hashimoto, K. Y., & Taniguchi, S. (2014). A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference (pp. 253-256). [6997840] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMIC.2014.6997840

A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology. / Zhang, Guoqiang; Anand, Awinash; Kamada, Kei et al.

European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 253-256 6997840.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, G, Anand, A, Kamada, K, Amalina, S, Kanaya, H, Pokharel, RK, Hikichi, K, Tanaka, S, Esashi, M, Hashimoto, KY & Taniguchi, S 2014, A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology. in European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference., 6997840, Institute of Electrical and Electronics Engineers Inc., pp. 253-256, 9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, 14/10/6. https://doi.org/10.1109/EuMIC.2014.6997840

Zhang G, Anand A, Kamada K, Amalina S, Kanaya H, Pokharel RK et al. A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 253-256. 6997840 https://doi.org/10.1109/EuMIC.2014.6997840

Zhang, Guoqiang ; Anand, Awinash ; Kamada, Kei et al. / A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology. European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 253-256

@inproceedings{dc9cfb321fcc4d9091a5c6169071ec02,

title = "A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology",

abstract = "A 1.9 GHz film bulk acoustic resonator (FBAR) based complementary cross-coupled voltage-controlled oscillator (VCO) designed in 0.18 μm CMOS is presented. DC latch and low frequency instability problems have been solved by the cross-coupled pairs with DC block capacitors. The open loop gain has been analyzed and optimized by considering the effect of transistors' size on enhancement of the stability at low frequencies and the loop gain at the desired oscillation frequency. The optimization of the phase noise has been done by considering the effect of PMOS transistors' size on the quality (Q-) factor and the impedance of FBAR. The final fabricated chip is packaged in dual in-line package (DIP) and the measured performance shows that the proposed FBAR-VCO achieves a phase noise of-148 dBc/Hz at 1 MHz offset with a figure of merit (FOM) of-212 dBc/Hz.",

keywords = "DC latch, FBAR-VCO, open loop gain, parasitic oscillation, phase noise",

author = "Guoqiang Zhang and Awinash Anand and Kei Kamada and Siti Amalina and Haruichi Kanaya and Pokharel, {Ramesh K.} and Kousuke Hikichi and Shuji Tanaka and Masayoshi Esashi and Hashimoto, {Ken Ya} and Shinji Taniguchi",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/EuMIC.2014.6997840",

language = "English",

pages = "253--256",

booktitle = "European Microwave Week 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 ; Conference date: 06-10-2014 Through 07-10-2014",

}

TY - GEN

T1 - A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology

AU - Zhang, Guoqiang

AU - Anand, Awinash

AU - Kamada, Kei

AU - Amalina, Siti

AU - Kanaya, Haruichi

AU - Pokharel, Ramesh K.

AU - Hikichi, Kousuke

AU - Tanaka, Shuji

AU - Esashi, Masayoshi

AU - Hashimoto, Ken Ya

AU - Taniguchi, Shinji

PY - 2014/1/1

Y1 - 2014/1/1

N2 - A 1.9 GHz film bulk acoustic resonator (FBAR) based complementary cross-coupled voltage-controlled oscillator (VCO) designed in 0.18 μm CMOS is presented. DC latch and low frequency instability problems have been solved by the cross-coupled pairs with DC block capacitors. The open loop gain has been analyzed and optimized by considering the effect of transistors' size on enhancement of the stability at low frequencies and the loop gain at the desired oscillation frequency. The optimization of the phase noise has been done by considering the effect of PMOS transistors' size on the quality (Q-) factor and the impedance of FBAR. The final fabricated chip is packaged in dual in-line package (DIP) and the measured performance shows that the proposed FBAR-VCO achieves a phase noise of-148 dBc/Hz at 1 MHz offset with a figure of merit (FOM) of-212 dBc/Hz.

AB - A 1.9 GHz film bulk acoustic resonator (FBAR) based complementary cross-coupled voltage-controlled oscillator (VCO) designed in 0.18 μm CMOS is presented. DC latch and low frequency instability problems have been solved by the cross-coupled pairs with DC block capacitors. The open loop gain has been analyzed and optimized by considering the effect of transistors' size on enhancement of the stability at low frequencies and the loop gain at the desired oscillation frequency. The optimization of the phase noise has been done by considering the effect of PMOS transistors' size on the quality (Q-) factor and the impedance of FBAR. The final fabricated chip is packaged in dual in-line package (DIP) and the measured performance shows that the proposed FBAR-VCO achieves a phase noise of-148 dBc/Hz at 1 MHz offset with a figure of merit (FOM) of-212 dBc/Hz.

KW - DC latch

KW - FBAR-VCO

KW - open loop gain

KW - parasitic oscillation

KW - phase noise

UR - http://www.scopus.com/inward/record.url?scp=84921273806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84921273806&partnerID=8YFLogxK

U2 - 10.1109/EuMIC.2014.6997840

DO - 10.1109/EuMIC.2014.6997840

M3 - Conference contribution

AN - SCOPUS:84921273806

SP - 253

EP - 256

BT - European Microwave Week 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014

Y2 - 6 October 2014 through 7 October 2014

ER -

A 1.9 GHz low phase noise complementary cross-coupled FBAR-VCO in 0.18 μm CMOS technology

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