Abstract
We have developed a 16Mb toggle MRAM. It has some 100-MHz burst modes that are compatible with a pseudo SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, an interleaved and pipelined memory-array group activation scheme and a noise insulation switch scheme have been proposed. The MRAM was fabricated with a 0.13-μm CMOS and 0.24-μm MRAM process with five metal layers.
Original language | English |
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Pages | 299-302 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 2006 |
Externally published | Yes |
Event | 2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006 - Hangzhou, China Duration: 2006 Nov 13 → 2006 Nov 15 |
Other
Other | 2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006 |
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Country/Territory | China |
City | Hangzhou |
Period | 06/11/13 → 06/11/15 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials