A 16Mb toggle MRAM with burst modes

Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken Ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo, Tetsuhiro Suzuki, Katsumi Suemitsu, Tomonori Mukai, Kaoru Mori, Ryusuke Nebashi, Shunsuke Fukami, Hiromitsu Hada, Nobuyuki IshiwataNaoki Kasai, Shuichi Tahara

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

We have developed a 16Mb toggle MRAM. It has some 100-MHz burst modes that are compatible with a pseudo SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, an interleaved and pipelined memory-array group activation scheme and a noise insulation switch scheme have been proposed. The MRAM was fabricated with a 0.13-μm CMOS and 0.24-μm MRAM process with five metal layers.

Original languageEnglish
Pages299-302
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006 - Hangzhou, China
Duration: 2006 Nov 132006 Nov 15

Other

Other2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006
CountryChina
CityHangzhou
Period06/11/1306/11/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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