A 16Mb toggle MRAM with burst modes

Tadahiko Sugibayashi; Noboru Sakimura; Takeshi Honda; Kiyokazu Nagahara; Kiyotaka Tsuji; Hideaki Numata; Sadahiko Miura; Ken Ichi Shimura; Yuko Kato; Shinsaku Saito; Yoshiyuki Fukumoto; Hiroaki Honjo; Tetsuhiro Suzuki; Katsumi Suemitsu; Tomonori Mukai; Kaoru Mori; Ryusuke Nebashi; Shunsuke Fukami; Hiromitsu Hada; Nobuyuki Ishiwata; Naoki Kasai; Shuichi Tahara

doi:10.1109/ASSCC.2006.357910

A 16Mb toggle MRAM with burst modes

Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken Ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo, Tetsuhiro Suzuki, Katsumi Suemitsu, Tomonori Mukai, Kaoru Mori, Ryusuke Nebashi, Shunsuke Fukami, Hiromitsu Hada, Nobuyuki IshiwataNaoki Kasai, Shuichi Tahara

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

We have developed a 16Mb toggle MRAM. It has some 100-MHz burst modes that are compatible with a pseudo SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, an interleaved and pipelined memory-array group activation scheme and a noise insulation switch scheme have been proposed. The MRAM was fabricated with a 0.13-μm CMOS and 0.24-μm MRAM process with five metal layers.

Original language	English
Pages	299-302
Number of pages	4
DOIs	https://doi.org/10.1109/ASSCC.2006.357910
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006 - Hangzhou, China Duration: 2006 Nov 13 → 2006 Nov 15

Other

Other	2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006
Country/Territory	China
City	Hangzhou
Period	06/11/13 → 06/11/15

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/ASSCC.2006.357910

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Sugibayashi, T., Sakimura, N., Honda, T., Nagahara, K., Tsuji, K., Numata, H., Miura, S., Shimura, K. I., Kato, Y., Saito, S., Fukumoto, Y., Honjo, H., Suzuki, T., Suemitsu, K., Mukai, T., Mori, K., Nebashi, R., Fukami, S., Hada, H., ... Tahara, S. (2006). A 16Mb toggle MRAM with burst modes. 299-302. Paper presented at 2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006, Hangzhou, China. https://doi.org/10.1109/ASSCC.2006.357910

Sugibayashi, T, Sakimura, N, Honda, T, Nagahara, K, Tsuji, K, Numata, H, Miura, S, Shimura, KI, Kato, Y, Saito, S, Fukumoto, Y, Honjo, H, Suzuki, T, Suemitsu, K, Mukai, T, Mori, K, Nebashi, R, Fukami, S, Hada, H, Ishiwata, N, Kasai, N & Tahara, S 2006, 'A 16Mb toggle MRAM with burst modes', Paper presented at 2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006, Hangzhou, China, 06/11/13 - 06/11/15 pp. 299-302. https://doi.org/10.1109/ASSCC.2006.357910

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abstract = "We have developed a 16Mb toggle MRAM. It has some 100-MHz burst modes that are compatible with a pseudo SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, an interleaved and pipelined memory-array group activation scheme and a noise insulation switch scheme have been proposed. The MRAM was fabricated with a 0.13-μm CMOS and 0.24-μm MRAM process with five metal layers.",

author = "Tadahiko Sugibayashi and Noboru Sakimura and Takeshi Honda and Kiyokazu Nagahara and Kiyotaka Tsuji and Hideaki Numata and Sadahiko Miura and Shimura, {Ken Ichi} and Yuko Kato and Shinsaku Saito and Yoshiyuki Fukumoto and Hiroaki Honjo and Tetsuhiro Suzuki and Katsumi Suemitsu and Tomonori Mukai and Kaoru Mori and Ryusuke Nebashi and Shunsuke Fukami and Hiromitsu Hada and Nobuyuki Ishiwata and Naoki Kasai and Shuichi Tahara",

year = "2006",

doi = "10.1109/ASSCC.2006.357910",

language = "English",

pages = "299--302",

note = "2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006 ; Conference date: 13-11-2006 Through 15-11-2006",

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AU - Sugibayashi, Tadahiko

AU - Sakimura, Noboru

AU - Honda, Takeshi

AU - Nagahara, Kiyokazu

AU - Tsuji, Kiyotaka

AU - Numata, Hideaki

AU - Miura, Sadahiko

AU - Shimura, Ken Ichi

AU - Kato, Yuko

AU - Saito, Shinsaku

AU - Fukumoto, Yoshiyuki

AU - Honjo, Hiroaki

AU - Suzuki, Tetsuhiro

AU - Suemitsu, Katsumi

AU - Mukai, Tomonori

AU - Mori, Kaoru

AU - Nebashi, Ryusuke

AU - Fukami, Shunsuke

AU - Hada, Hiromitsu

AU - Ishiwata, Nobuyuki

AU - Kasai, Naoki

AU - Tahara, Shuichi

PY - 2006

Y1 - 2006

N2 - We have developed a 16Mb toggle MRAM. It has some 100-MHz burst modes that are compatible with a pseudo SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, an interleaved and pipelined memory-array group activation scheme and a noise insulation switch scheme have been proposed. The MRAM was fabricated with a 0.13-μm CMOS and 0.24-μm MRAM process with five metal layers.

AB - We have developed a 16Mb toggle MRAM. It has some 100-MHz burst modes that are compatible with a pseudo SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, an interleaved and pipelined memory-array group activation scheme and a noise insulation switch scheme have been proposed. The MRAM was fabricated with a 0.13-μm CMOS and 0.24-μm MRAM process with five metal layers.

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T2 - 2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006

Y2 - 13 November 2006 through 15 November 2006

ER -

A 16Mb toggle MRAM with burst modes

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