An 87.7 mm2 1.6 GB/s 128 Mb chain FeRAM with 130 nm 4-metal CMOS process is demonstrated. In addition to small bitline capacitance inherent to chain FeRAM architecture, three new FeRAM scaling techniques-octal bitline architecture, small parasitic capacitance sensing scheme, and dual metal plateline scheme-reduce bitline capacitance from 100 fF to 60 fF. As a result, a cell signal of ±220 mV is achieved even with the small cell size of 0.252 μm2. An 800 Mb/s/pin read/write bandwidth at 400 MHz clock is realized by installing SDRAM compatible DDR2 interface, and performance is verified by simulation. The internal power-line bounce noise due to 400 MHz clock operation is suppressed to less than 50 mV by an event-driven current driver, which supplies several hundreds of mA of current within 2 ns response. The precise timing and voltage controls are achieved by using the data stored in a compact FeRAM-fuse, which consists of extra FeRAM memory cells placed in edge of normal array instead of conventional laser fuse links. This configuration minimizes area penalty to 0.2% without cell signal degradation.
- Ferroelectric memory
- Nonvolatile memory
- Random access memory
ASJC Scopus subject areas
- Electrical and Electronic Engineering