A 128kb FeRAM macro for a contact/contactless smart card microcontroller

J. Yamada, T. Miwa, H. Koike, H. Toyoshima, K. Amanuma, S. Kobayashi, T. Tatsumi, Y. Maejima, H. Hada, H. Mori, S. Takahashi, H. Takeuchi, T. Kunio

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.

Original languageEnglish
Pages (from-to)270-271
Number of pages2
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication statusPublished - 2000 Dec 1
Externally publishedYes
Event2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States
Duration: 2000 Feb 72000 Feb 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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