A 128kb FeRAM macro for a contact/contactless smart card microcontroller

J. Yamada; T. Miwa; H. Koike; H. Toyoshima; K. Amanuma; S. Kobayashi; T. Tatsumi; Y. Maejima; H. Hada; H. Mori; S. Takahashi; H. Takeuchi; T. Kunio

A 128kb FeRAM macro for a contact/contactless smart card microcontroller

J. Yamada, T. Miwa, H. Koike, H. Toyoshima, K. Amanuma, S. Kobayashi, T. Tatsumi, Y. Maejima, H. Hada, H. Mori, S. Takahashi, H. Takeuchi, T. Kunio

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.

Original language	English
Pages (from-to)	270-271
Number of pages	2
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication status	Published - 2000 Dec 1
Externally published	Yes
Event	2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States Duration: 2000 Feb 7 → 2000 Feb 9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "A 128kb FeRAM macro for a contact/contactless smart card microcontroller",

abstract = "A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.",

author = "J. Yamada and T. Miwa and H. Koike and H. Toyoshima and K. Amanuma and S. Kobayashi and T. Tatsumi and Y. Maejima and H. Hada and H. Mori and S. Takahashi and H. Takeuchi and T. Kunio",

year = "2000",

month = dec,

day = "1",

language = "English",

pages = "270--271",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC ; Conference date: 07-02-2000 Through 09-02-2000",

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TY - JOUR

T1 - A 128kb FeRAM macro for a contact/contactless smart card microcontroller

AU - Yamada, J.

AU - Miwa, T.

AU - Koike, H.

AU - Toyoshima, H.

AU - Amanuma, K.

AU - Kobayashi, S.

AU - Tatsumi, T.

AU - Maejima, Y.

AU - Hada, H.

AU - Mori, H.

AU - Takahashi, S.

AU - Takeuchi, H.

AU - Kunio, T.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.

AB - A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.

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M3 - Conference article

AN - SCOPUS:0034429693

SP - 270

EP - 271

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SN - 0193-6530

T2 - 2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC

Y2 - 7 February 2000 through 9 February 2000

ER -

A 128kb FeRAM macro for a contact/contactless smart card microcontroller

Abstract

ASJC Scopus subject areas

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