A 128kb FeRAM macro for a contact/contactless smart card microcontroller

J. Yamada; T. Miwa; H. Koike; H. Toyoshima; K. Amanuma; S. Kobayashi; T. Tatsumi; Y. Maejima; H. Hada; H. Mori; S. Takahashi; H. Takeuchi; T. Kunio

A 128kb FeRAM macro for a contact/contactless smart card microcontroller

J. Yamada, T. Miwa, H. Koike, H. Toyoshima, K. Amanuma, S. Kobayashi, T. Tatsumi, Y. Maejima, H. Hada, H. Mori, S. Takahashi, H. Takeuchi, T. Kunio

Research output: Contribution to journal › Conference article

11 Citations (Scopus)

Abstract

A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.

Original language	English
Pages (from-to)	270-271
Number of pages	2
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication status	Published - 2000 Dec 1
Externally published	Yes
Event	2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States Duration: 2000 Feb 7 → 2000 Feb 9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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A 128kb FeRAM macro for a contact/contactless smart card microcontroller. / Yamada, J.; Miwa, T.; Koike, H.; Toyoshima, H.; Amanuma, K.; Kobayashi, S.; Tatsumi, T.; Maejima, Y.; Hada, H.; Mori, H.; Takahashi, S.; Takeuchi, H.; Kunio, T.

In: Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 01.12.2000, p. 270-271.

Research output: Contribution to journal › Conference article

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abstract = "A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.",

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AU - Yamada, J.

AU - Miwa, T.

AU - Koike, H.

AU - Toyoshima, H.

AU - Amanuma, K.

AU - Kobayashi, S.

AU - Tatsumi, T.

AU - Maejima, Y.

AU - Hada, H.

AU - Mori, H.

AU - Takahashi, S.

AU - Takeuchi, H.

AU - Kunio, T.

PY - 2000/12/1

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N2 - A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.

AB - A 128kb ferroelectric memory macro for a contact/contactless smart card microcontroller was studied. The macro uses 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell, voltage regulation architecture, main/sub bit line and word line structure and dynamic-type offset sense amplifier. The memory cell array featuring low current consumption and memory size flexibility was produced using 3-metal wiring. The offset sense amplifier was used to improve ferroelectric memory reliability.

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T2 - 2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC

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