TY - JOUR
T1 - A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers
AU - Yamada, Junichi
AU - Miwa, Tohru
AU - Koike, Hiroki
AU - Toyoshima, Hideo
AU - Amanuma, Kazushi
AU - Kobayashi, Sola
AU - Tatsumi, Toru
AU - Maejima, Yukihiko
AU - Hada, Hiromitsu
AU - Mori, Hidemitsu
AU - Takahashi, Seiichi
AU - Takeuchi, Hidenori
AU - Kunio, Takemitsu
PY - 2002/8
Y1 - 2002/8
N2 - This paper describes a 128-kb FeRAM macro for smart-card microcontrollers. This macro, which was designed and fabricated using a 0.35-μm three-metal CMOS and a Capacitor-on-Metal/Via-stacked-Plug (CMVP) process technology, is ideally suited for recent system LSIs such as smart-card microcontrollers. It has a flexible memory size ranging from 32 to 128 kb, a low consumption current of 0.3 mA, and endurance of more than 10 8 write/read cycles under a wide range of supply voltages, from 2.7 to 5.5 V. These characteristics, which are required of not only contact-type smart-card microcontrollers but also contactless-type ones, were achieved by using four newly developed circuit technologies: 1) a three-metal CMVP memory cell; 2) a voltage-regulating architecture; 3) a main/sub bitline and wordline structure; and 4) a dynamic-type offset sense amplifier.
AB - This paper describes a 128-kb FeRAM macro for smart-card microcontrollers. This macro, which was designed and fabricated using a 0.35-μm three-metal CMOS and a Capacitor-on-Metal/Via-stacked-Plug (CMVP) process technology, is ideally suited for recent system LSIs such as smart-card microcontrollers. It has a flexible memory size ranging from 32 to 128 kb, a low consumption current of 0.3 mA, and endurance of more than 10 8 write/read cycles under a wide range of supply voltages, from 2.7 to 5.5 V. These characteristics, which are required of not only contact-type smart-card microcontrollers but also contactless-type ones, were achieved by using four newly developed circuit technologies: 1) a three-metal CMVP memory cell; 2) a voltage-regulating architecture; 3) a main/sub bitline and wordline structure; and 4) a dynamic-type offset sense amplifier.
KW - CMVP memory cell
KW - Embedded memory
KW - Ferroelectric memory
KW - Smart-card microcontroller
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U2 - 10.1109/JSSC.2002.800930
DO - 10.1109/JSSC.2002.800930
M3 - Article
AN - SCOPUS:0036684705
VL - 37
SP - 1073
EP - 1079
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
SN - 0018-9200
IS - 8
ER -