A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers

Junichi Yamada, Tohru Miwa, Hiroki Koike, Hideo Toyoshima, Kazushi Amanuma, Sola Kobayashi, Toru Tatsumi, Yukihiko Maejima, Hiromitsu Hada, Hidemitsu Mori, Seiichi Takahashi, Hidenori Takeuchi, Takemitsu Kunio

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


This paper describes a 128-kb FeRAM macro for smart-card microcontrollers. This macro, which was designed and fabricated using a 0.35-μm three-metal CMOS and a Capacitor-on-Metal/Via-stacked-Plug (CMVP) process technology, is ideally suited for recent system LSIs such as smart-card microcontrollers. It has a flexible memory size ranging from 32 to 128 kb, a low consumption current of 0.3 mA, and endurance of more than 10 8 write/read cycles under a wide range of supply voltages, from 2.7 to 5.5 V. These characteristics, which are required of not only contact-type smart-card microcontrollers but also contactless-type ones, were achieved by using four newly developed circuit technologies: 1) a three-metal CMVP memory cell; 2) a voltage-regulating architecture; 3) a main/sub bitline and wordline structure; and 4) a dynamic-type offset sense amplifier.

Original languageEnglish
Pages (from-to)1073-1079
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Issue number8
Publication statusPublished - 2002 Aug
Externally publishedYes


  • CMVP memory cell
  • Embedded memory
  • Ferroelectric memory
  • Smart-card microcontroller

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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